MMBTA13
MMBTA14
NPN Transistors Darlington Amplifier
COLLECTOR 3
BASE
1
EMITTER 2
MA XIMUM R AT ING S
R ating
C ollector- E mitter Voltage
C ollector- B as e Voltage
E mitter- B as e Voltage
C ollector C urrent - C ontinuous
S ymbol
VC E S
VC BO
VE BO
IC
Value
30
30
10
300
Unit
V dc
V dc
V dc
mAdc
1
2
3
T HE R MA L C HA R A C T E R IS T IC S
C harac teris tic
Total Device Dis s ipation F R ±5 B oard(1)
T A = 25 C
Derate above 25 C
T hermal R es is tance J unction to Ambient
Total Device Dis s ipation
Alumina S ubs trate, (2) T A = 25 C
Derate above 25 C
T hermal R es is tance J unction to Ambient
J unction and S torage Temperature
S ymbol
PD
Max
225
1.8
R JA
PD
556
300
2.4
R
q
J A
T J , Ts tg
417
- 55 to +150
Unit
mW
mW/ C
C /W
mW
mW/ C
C /W
C
S OT -23
DE V IC E MA R K ING
MMB TA13 = 1M; MMB T A14LT 1 = 1N
E L E C T R IC A L C HA R A C T E R IS T IC S
(T A = 25 C unles s otherwis e noted)
C harac teris tic
S ymbol
Min
Max
Unit
OF F C HA R A C T E R IS T IC S
C ollector- E mitter B reakdown Voltage
(I C = 100 uAdc, V B E = 0)
C ollector C utoff C urrent
(V C B = 30 V dc, I E = 0)
E mitter C utoff C urrent
(V E B = 10 V dc, I C = 0)
1. F R - 5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
_
_
_
_
_
_
_
_
V (B R )C E S
IC B O
IE B O
30
-
-
-
100
100
V dc
nAdc
nAdc
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