MMBTA64
Darlington Transistor
PNP Silicon
1
BASE
COLLECTOR
3
3
1
2
2
EMITTER
SOT-23
MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Symbol
VCES
VCBO
VEBO
IC
Value
-30
-30
-10
-500
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristics
Total Device Dissipation FR-5 Board
(1)
T
A
=25 C
Derate above 25 C
Thermal Resistance, Junction Ambient
Junction and Storage, Temperature
Symbol
PD
R
θJA
T
J,Tstg
Value
225
1.8
556
-55 to +150
Unit
mW
mW/ C
C/W
C
Device Marking
MMBTA63=2U , MMBTA64=2V
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage(I C =-100 uAdc, IB =0)
Collector Cufoff Current(V CB =-30Vdc, I E =0)
Emitter Cufoff Current(VEB =-10Vdc, IC =0)
1. FR-5=1.0
I
I
0.75
I
I
0.062 in
_
_
2. Pulse Test: Pulse Width< 300us, Duty Cycle < 2.0%
Symbol
V(BR)CEO
ICBO
IEBO
Min
-30
-
-
Max
-
-0.1
-0.1
Unit
Vdc
uAdc
uAdc
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