MPSA42
NPN Silicon General Purpose Transistors
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
1
2
3
MAXIMUM RATINGS* T
A
=25
℃
unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
T
J
, T
stg
R
Ө
JA
R
Ө
JC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Junction and Storage Temperature
Thermal Resistance, junction to Ambient
Thermal Resistance, unction to Case
Parameter
Value
310
305
5
500
-55-150
200
83.3
Units
V
V
V
mA
℃
℃/mW
℃/mW
*These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired.
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE(sat)
V
BE(sat)
f
T
Test
unless
otherwise
specified)
MIN
310
305
5
0.25
0.1
60
80
75
0.2
0.9
50
V
V
MHz
250
TYP
MAX
UNIT
V
V
V
µA
µA
conditions
Ic=100uA, I
E
=0
Ic=1mA, I
B
=0
I
E
=100µA, I
C
=0
V
CB
=200V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=30mA
I
C
=20mA, I
B
=2mA
I
C
=20mA, I
B
=2mA
V
CE
=20V, I
C
=10mA,f=30MH
Z
CLASSIFICATION OF h
FE(2)
Rank
Range
A
80-100
B
1
100-150
B
2
150-200
C
200-250
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