PZTA42
NPN Silicon Planar Epitaxial Transistor
BASE
1
3
EMITTER
COLLECTOR
2, 4
1. BASE
2.COLLECTOR
3.EMITTER
4.COLLECTOR
4
1
2
3
SOT-223
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Total Device Disspation T
A
=25˚C
Junction Temperature
Storage, Temperature
Symbol
VCEO
VCBO
VEBO
I C(DC)
PD
Tj
Tstg
Value
300
300
6
500
2
150
-55 to +150
Unit
V
V
V
mA
W
˚C
˚C
Device Marking
PZTA42=A42
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage
(IC=1mA)
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Min
300
300
6
-
-
Typ
-
-
-
-
-
Max
-
-
-
100
100
Unit
V
V
V
nA
nA
Collector-Base Breakdown Voltage
(IC=100µA)
Emitter-Base Breakdown Voltage
(IE=10 µA)
Collector-Emitter Cutoff Current
(VCB=300V)
Emitter-Base Cutoff Current
(VEB=6V)
WEITRON
http://www.weitron.com.tw
1/3
02-Jun-05
WEITRON [ WEITRON TECHNOLOGY ]
