TIP41 Series
NPN Silicon Power Transistor
P b
Lead(Pb)-Free
COLLECTOR
2
BASE
1
1
2
FEATURES:
* Medium Power Linear Switching Applications
3
3
EMITTER
1. BASE
2. COLLECTOR
3. EMITTER
TO-220
MAXIMUM RATINGS
(T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
TIP41
40
40
TIP41A
60
60
5
6
2
150
-55-150
TIP41B
80
80
TIP41C
100
100
Units
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
TIP41
TIP41A
TIP41B
TIP41C
TIP41
TIP41A
TIP41B
TIP41C
Symbol
Test
conditions
MIN
40
60
80
100
40
60
80
100
5
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
I
C
=1mA, I
E
=0
V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
=30mA, I
B
=0
V
Emitter-base breakdown voltage
TIP41
TIP41A
TIP41B
TIP41C
TIP41/41A
TIP41B/41C
V
(BR)EBO
I
E
= 1mA, I
C
=0
V
CB
=40V, I
E
=0
V
CB
=60V, I
E
=0
V
CB
=80V, I
E
=0
V
CB
=100V, I
E
=0
V
CE
=30V, I
B
=0
V
CE
=60V, I
B
=0
V
EB
=5V, I
C
=0
V
CE
=4V, I
C
=0.3A
V
CE
=4V, I
C
=3A
I
C
=6A, I
B
=0.6A
V
CE
=4V, I
C
=6A
V
CE
=10V, I
C
=0.5A
f = 1MHz
V
Collector cut-off current
I
CBO
0.4
mA
Collector cut-off current
Emitter cut-off current
I
CEO
I
EBO
h
FE(1)
0.7
1
30
15
75
1.5
2
3
mA
mA
DC current gain
h
FE(2)
V
CE (sat)
V
BE(on)
f
T
Collector-emitter saturation voltage
Base-emitter voltage
Transition Frequency
V
V
MHz
WEITRON
http://www.weitron.com.tw
1/3
12-Aug-10
WEITRON [ WEITRON TECHNOLOGY ]
