万和兴电子有限公司 www.whxpcb.com
AO4310
36V N-Channel MOSFET
General Description
The AO4310 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance.Power losses are
minimized due to an extremely low combination of
R
DS(ON)
and Crss.In addition,switching behavior is well
controlled with a "Schottky style" soft recovery body
diode.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 4.5V)
36V
27A
< 3.1mΩ
< 4.2mΩ
100% UIS Tested
100% R
g
Tested
SOIC-8
Top View
D
D
D
D
Bottom View
D
G
G
S
S
S
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Maximum
36
±20
27
22
390
67
224
3.6
2.3
-55 to 150
Units
V
V
A
A
mJ
W
°
C
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
C
V
GS
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
AS
, I
AR
E
AS
, E
AR
P
D
T
J
, T
STG
Avalanche energy L=0.1mH
T
A
=25°
C
Power Dissipation
B
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
27
52
10
Max
35
65
15
Units
°
C/W
°
C/W
°
C/W
Rev 0: February 2011
www.aosmd.com
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