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AO4419 参数 Datasheet PDF下载

AO4419图片预览
型号: AO4419
PDF下载: 下载PDF文件 查看货源
内容描述: 30V P沟道MOSFET [30V P-Channel MOSFET]
分类和应用:
文件页数/大小: 6 页 / 2522 K
品牌: WHXPCB [ shenzhen wanhexing Electronics Co.,Ltd ]
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万和兴电子有限公司 www.whxpcb.com
AO4419
30V P-Channel MOSFET
General Description
The AO4419 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R
DS(ON)
. This device is ideal for load switch
and battery protection applications.
Product Summary
V
DS
I
D
(at V
GS
=-10V)
R
DS(ON)
(at V
GS
=-10V)
R
DS(ON)
(at V
GS
= -4.5V)
-30V
-9.7A
< 20mΩ
< 35mΩ
100% UIS Tested
100% R
g
Tested
SOIC-8
Top View
D
D
D
D
D
Bottom View
G
G
S
S
S
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
V
DS
Maximum
-30
±20
-9.7
-7.8
-70
-27
36
3.1
2
-55 to 150
Units
V
V
A
A
mJ
W
°C
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
C
V
GS
T
A
=25°C
T
A
=70°C
I
D
I
DM
I
AS
, I
AR
E
AS
, E
AR
P
D
T
J
, T
STG
Avalanche energy L=0.1mH
T
A
=25°C
Power Dissipation
B
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
31
59
16
Max
40
75
24
Units
°C/W
°C/W
°C/W
Rev 6: May 2011
www.aosmd.com
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