万和兴电子有限公司 www.whxpcb.com
AO4441
60V P-Channel MOSFET
General Description
The AO4441 uses advanced trench technology to provide
excellent R
DS(ON)
, and ultra-low low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
Product Summary
V
DS
I
D
(at V
GS
=-10V)
R
DS(ON)
(at V
GS
=-10V)
R
DS(ON)
(at V
GS
= -4.5V)
-60V
-4A
< 100mΩ
< 130mΩ
SOIC-8
Top View
D
D
D
D
Bottom View
D
G
G
S
S
S
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Symbol
Parameter
V
DS
Drain-Source Voltage
Maximum
-60
±20
-4
-3.1
-20
3.1
2
-55 to 150
Units
V
V
A
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
B
V
GS
T
A
=25°
C
T
A
=70°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
P
D
T
J
, T
STG
W
°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
24
54
21
Max
40
75
30
Units
°
C/W
°
C/W
°
C/W
Rev.2.0: August 2013
www.aosmd.com
Page 1 of 5
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