万和兴电子有限公司 www.whxpcb.com
AO4446
30V N-Channel MOSFET
General Description
The AO4446 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and low
gate resistance. This device is ideally suited for use
in PWM applications.
Product Summary
V
DS
(V) = 30V
I
D
= 15A (V
GS
= 10V)
R
DS(ON)
< 8.5mΩ (V
GS
= 10V)
R
DS(ON)
< 14.5mΩ (V
GS
= 4.5V)
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
D
D
Bottom View
D
G
S
S
S
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Maximum
30
±20
15
12
40
20
50
3
2.1
-55 to 150
Units
V
V
A
A
mJ
W
°
C
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Avalanche Current
B
Repetitive avalanche energy L=0.1mH
T
A
=25°
C
Power Dissipation
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
B
B
V
GS
C
T
A
=25°
T
A
=70°
C
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
STG
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
33
59
16
Max
40
75
24
Units
°
C/W
°
C/W
°
C/W
Alpha & Omega Semiconductor, Ltd.
WHXPCB [ shenzhen wanhexing Electronics Co.,Ltd ]
