万和兴电子有限公司 www.whxpcb.com
AO4449
30V P-Channel MOSFET
General Description
The AO4449 uses advanced trench technology to provide
excellent RDS(ON), and ultra-low low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
Product Summary
V
DS
I
D
(at V
GS
=-10V)
R
DS(ON)
(at V
GS
=-10V)
R
DS(ON)
(at V
GS
= -4.5V)
-30V
-7A
< 34mΩ
< 54mΩ
100% UIS Tested
100% R
g
Tested
SOIC-8
Top View
D
D
D
D
Bottom View
D
G
G
S
S
S
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Maximum
-30
±20
-7
-5.5
-40
23
26
3.1
2
-55 to 150
Units
V
V
A
A
mJ
W
°
C
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
C
V
GS
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
AS
, I
AR
E
AS
, E
AR
P
D
T
J
, T
STG
Avalanche energy L=0.1mH
T
A
=25°
C
Power Dissipation
B
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
31
59
16
Max
40
75
24
Units
°
C/W
°
C/W
°
C/W
Rev 3: Nov 2011
www.aosmd.com
Page 1 of 6
WHXPCB [ shenzhen wanhexing Electronics Co.,Ltd ]
