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AO4453
12V P-Channel MOSFET
General Description
The AO4453 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R
DS(ON)
. This device is ideal for load switch
and battery protection applications.
Product Summary
V
DS
I
D
(at V
GS
=-4.5V)
R
DS(ON)
(at V
GS
=-4.5V)
R
DS(ON)
(at V
GS
=-3.3V)
R
DS(ON)
(at V
GS
=-2.5V)
R
DS(ON)
(at V
GS
=-1.8V)
R
DS(ON)
(at V
GS
=-1.5V)
100% UIS Tested
100% R
g
Tested
-12V
-9A
< 19mΩ
< 22mΩ
< 26mΩ
< 36mΩ
< 50mΩ
SOIC-8
Top View
D
D
D
D
Bottom View
D
G
G
S
S
S
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Maximum
-12
Units
V
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
C
V
GS
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
AS
E
AS
P
D
T
J
, T
STG
±8
-9
-7
-55
20
20
2.5
1.6
-55 to 150
V
A
A
mJ
W
°
C
Avalanche energy L=0.1mH
T
A
=25°
C
Power Dissipation
B
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
42
70
20
Max
50
85
30
Units
°
C/W
°
C/W
°
C/W
Rev 0: Oct. 2012
www.aosmd.com
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