万和兴电子有限公司 www.whxpcb.com
AO4455
30V P-Channel MOSFET
General Description
The AO4455 uses advanced trench technology to provide
excellent R
DS(ON)
, and ultra-low low gate charge with a
25V gate rating. This device is suitable for use as a load
switch or in PWM applications.
Product Summary
V
DS
(V) = -30V
I
D
= -17A
R
DS(ON)
< 6.2mΩ
R
DS(ON)
< 7.2mΩ
ESD Protected
100% UIS tested
100% Rg tested
(V
GS
= -20V)
(V
GS
= -20V)
(V
GS
= -10V)
* RoHS and Halogen-Free Complaint
SOIC-8
Top View
D
D
D
D
Bottom View
D
G
G
S
S
S
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Maximum
-30
±25
-17
-14
-182
3.1
2
-55 to 150
Units
V
V
A
Gate-Source Voltage
Continuous Drain
AF
Current
Pulsed Drain Current
Power Dissipation
A
B
V
GS
T
A
=25°
C
T
A
=70°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
P
D
T
J
, T
STG
W
°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
AF
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
26
50
14
Max
40
75
24
Units
°
C/W
°
C/W
°
C/W
Rev.1.0: July 2013
www.aosmd.com
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