万和兴电子有限公司 www.whxpcb.com
AO4485
40V P-Channel MOSFET
General Description
The AO4485 uses advanced trench technology to
provide excellent R
DS(ON)
with low gate charge. This
device is suitable for use as a DC-DC converter
application.
Product Summary
V
DS
(V) = -40V
I
D
= -10A
R
DS(ON)
< 15m
R
DS(ON)
< 20m
(V
GS
= -10V)
(V
GS
= -10V)
(V
GS
= -4.5V)
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
D
D
Bottom View
D
G
S
S
S
G
S
Absolute Maximum Ratings T
J
=25° unless otherwise noted
C
Parameter
10 Sec
Steady State
Symbol
Drain-Source Voltage
V
DS
-40
Units
V
V
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Avalanche Current
G
Repetitive avalanche energy L=0.3mH
T
A
=25°
C
A
Power Dissipation
T
A
=70°
C
G
B
V
GS
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
STG
3.1
2.0
-12
-9
±20
-10
-8
-120
-28
118
1.7
1.1
-55 to 150
A
mJ
W
°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady State
Steady State
R
θJA
R
θJL
Typ
31
59
16
Max
40
75
24
Units
°
C/W
°
C/W
°
C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
WHXPCB [ shenzhen wanhexing Electronics Co.,Ltd ]
