WILLAS
SOD-123 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY
FAST SWITCHING DIODE
BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
FM120-M
THRU
1N4448W
FM1200-M
Pb Free Product
•
Batch
FEATURES
process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Fast Switching Speed
•
Low profile surface mounted application in order to
optimize board space.
Surface Mount Package Ideally Suited for Automatic Insertion
•
Low power loss, high efficiency.
For General Purpose Switching Applications
•
High current capability, low forward voltage drop.
High Conductance
•
High surge capability.
•
Guardring for overvoltage protection.
Pb-Free package is available
•
Ultra high-speed switching.
RoHS product for packing code suffix ”G”
•
Silicon epitaxial planar chip, metal silicon junction.
Halogen free
parts meet environmental standards of
•
Lead-free
product for packing code suffix “H”
MIL-STD-19500 /228
Moisture Sensitivity Level 1
Features
Package outline
SOD-123
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MARKING: T5
& A3
•
RoHS product for packing code suffix "G"
Polarity:
Color band denotes cathode end
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
•
Epoxy : UL94-V0 rated flame retardant
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
•
Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
,
Parameter
Symbol
Limit
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
Unit
V
Non-Repetitive Peak Reverse Voltage
•
Polarity : Indicated by cathode band
Peak Repetitive Peak Reverse Voltage
•
Mounting Position : Any
Working Peak
:
Reverse Voltage
gram
•
Weight Approximated 0.011
DC Blocking Voltage
V
RM
V
RRM
V
RWM
V
R
100
Dimensions in inches and (millimeters)
75
V
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
53
500
250
4.0
15
50
1.5
35
V
R(RMS)
RMS Reverse Voltage
temperature unless otherwise specified.
Ratings at 25℃ ambient
Single phase half wave,
Current
I
FM
Forward Continuous
60Hz, resistive of inductive load.
V
mA
mA
A
For capacitive load, derate current by 20%
RATINGS
Average Rectified Output Current
Peak Forward Surge Current @t=1.0μs
Marking Code
Maximum Recurrent Peak Reverse Voltage
@t =1.0s
Maximum RMS Voltage
Maximum DC Blocking Voltage
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
I
O
V
RRM
V
RMS
V
DC
I
FSM
Pd
I
O
12
20
14
20
13
30
21
30
14
40
28
40
16
60
42
60
1.0
30
40
120
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Vol
Power Dissipation
500
50
mW
Vol
Vol
Thermal Resistance Junction to
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
Storage Temperature
load (JEDEC method)
superimposed on rated
and Junction Temperature
Ambient
R
θJA
T
STG
/T
j
R
ΘJA
C
J
T
J
TSTG
Symbol
I
FSM
250
-55~+150
℃/W
℃
Am
Am
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Electrical Ratings @Ta=25℃
Operating Temperature Range
-55 to +125
-55 to +150
℃/W
PF
Max
Unit
℃
Parameter
Storage Temperature Range
Min
Typ
-
65
to +175
Conditions
℃
Reverse Breakdown Voltage
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
V
SYMBOL
(BR)R
V
V
F1
F
I
R
75
V
I
R
FM1100-MH
FM1150-MH
FM1200-MH
UN
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH
=10μA
0.62
0.50
0.72
0.855
1.0
1.25
2.5
25
4
4
0.70
V
0.85
0.5
10
I
F
=5mA
0.9
0.92
Vol
V
F2
V
F3
V
F4
I
R1
I
R2
V
V
V
μA
nA
pF
ns
I
F
=10mA
I
F
=100mA
I
F
=150mA
V
R
=75V
V
R
=20V
V
R
=0V,f=1MHz
I
F
=I
R
=10mA
mAm
Forward Voltage
NOTES:
2- Thermal Resistance From Junction to Ambient
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Reverse Current
Capacitance Between Terminals
Reverse Recovery Time
C
T
t
rr
2012-06
Irr=0.1XI
R
,R
L
=100Ω
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
