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1N4755A 参数 Datasheet PDF下载

1N4755A图片预览
型号: 1N4755A
PDF下载: 下载PDF文件 查看货源
内容描述: 玻璃钝化结硅稳压二极管 [GLASS PASSIVATED JUNCTION SILICON ZENER DIODE]
分类和应用: 稳压二极管测试
文件页数/大小: 5 页 / 623 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
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WILLAS
DATA SHEET
1N4728A~1N4764A
VOLTAGE
FEATURES
• Low profile package
• Built-in strain relief
• Low inductance
• High temperature soldering : 260°C /10 seconds at terminals
SCS50
VOLTAG
0.1AMP Schottky
Pb Free Product
FEATURES
* Extremely Low VF
.012 (0.3)
SOD-323
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE
3.3 to 100 Volts
POWER
1.0 Watts
* Extremely thin package
* Low stored charge
* Majority carrier conduction
DO-41G
Unit:millimeters
.112 (2.85)
.100 (2.55)
.076 (1.95)
Catho
.065 (1.65)
1.00(25.4)MIN
.
.031(0.78)
.026(0.65)
.059 (1.5)
.004 (0.1)
max.
MECHANICAL DATA
.177(4.50)
.043 (1.1)
MECHANICAL DATA
• Case: Molded Glass DO-41G
* Terminal : Solder plated, solderable per MIL-STD-750,
Method 2026
1.00(25.4)MIN.
* Polarity : Indicated by cathode band
• Terminals: Axial leads, solderable per MIL-STD-202,
* Mounting Position : Any
• Method 208 guaranteed
* Weight : 0.000159 ounce, 0.0045 gram
• Polarity: Color band denotes positive end
.138(3.50)
* Case:Molded plastic, JEDEC SOD-323(SC-76)
.107(2.70)
.080(2.00)
• Mounting position:Any
• Weight: 0.012 ounce, 0.3 gram
Marking Code: J
MAXIMUM RATING AND ELECTRICAL CHARACT
• Packing information
Rating 25
o
C ambient temperature unless otherwise specified.
Single
T/B - 2.5K per horiz. tape & Ammo box
phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Parameter
Conditions
Symbol
V
RM
V
R
I
F
= 10mA DC
Symbol
Val
I
F
= 100mA DC
ue
Units
W
O
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Continuous Reverse Voltage
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Power Dissipation at Tamb = 25
Operating Junction Temperature
O
Repetitive Peak Reverse Voltage
Forward Voltage
Reverse Current
Mean Rectifying Current
Peak forward surge current
V
F1
V
F2
C
P
TOT
T
J
T
STG
V
R
= 10V DC
1*
I
R
I
O
I
FSM
C
T
T
J
T
STG
- 55 to + 150
-55 to + 150
C
C
Storage Temperature Range
Capacitance between terminals
Operating Temperature
O
*Valid provided that leads at a distance of 10mm from c
Storage
ept at ambient temperature.
ase are k
Temperature
Parameter
Thermal Resi stance Juncti on to Ambi ent Ai r
Forward Voltage at IF = 200mA
Symbol
Min.
--
--
Typ.
Max.
170*
1.2
Uni ts
K/W
V
RthA
VF
--
--
*Vali d provi ded that leads at a di stance of 10mm from case are kept at ambi ent temperature.