WILLAS
Silicon Z–Diodes
Features
D
D
D
D
Plannar Die constuction
500mW Power Dissipation
Ideally Suited for Automated Assembly Processes
V
Z
–tolerance
±
5%
1N5221B
THRU
1N5267B
Unit: inch (mm)
DO-35
.022(0.55)
.018(0.45)
1.02(26.0)
MIN.
.153(3.6)
.132(3.0)
Applications
Voltage stabilization
.087(2.2)
.067(1.7)
1.02(26.0)
MIN.
MECHANICAL DATA
Approx. Weight:
0.136 grams
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
T
amb=25
°
C
Type
Symbol
P
TOT
I
Z
T
j
T
stg
Value
500
P
V
/V
Z
175
–65...+175
Unit
mW
mA
°
C
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
l=9.5mm (3/8”), T
L
=constant
Symbol
R
thJA
Value
300
Unit
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Test Conditions
I
F
=200mA
Type
Symbol
V
F
Min
Typ
Max
1.1
Unit
V
2010.06
WILLS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
