WILLAS
1N914B SIGNAL DIODE
Absolute Maximum Ratings (Ta=25
°
C)
Items
Symbol
Ratings Unit
Reverse Voltage
VR
75
V
Reverse Recovery
trr
4
ns
Time
Power Dissipation
P
500
mW
3.33mW/
°
C (25
°
C)
Forward Current
IF
300
mA
Junction Temp.
Tj
-65 to 175
°
C
Storage Temp.
Tstg -65 to 175
°
C
Mechanical Data
Items
Package
Case
Lead/Finish
Chip
Materials
DO-35
Hermetically sealed glass
Double stud/Solder Plating
Glass Passivated
1N914B
SC
VO
0.1AMP Scho
Pb Free Product
FEATURES
* Extremely Low VF
S
Dimensions (DO-35
)
.022(0.55)
.018(0.45)
.01
* Extremely thin package
.112 (2.85)
.100 (2.55)
.076 (1.95)
.059 (1.5)
* Low stored charge
* Majority carrier conduction
1.02(26.0)
MIN.
* Case:Molded plastic, JEDEC SOD-323(SC-76)
1.02(26.0)
MIN.
.087(2.2)
.067(1.7)
* Terminal : Solder plated, solderable per MIL-STD-750,
Method 2026
* Polarity : Indicated by cathode band
* Mounting Position : Any
* Weight : 0.000159 ounce, 0.0045 gram
Unit: inch (mm)
Marking
Electrical Characteristics (Ta=25
°
C)
Ratings
Minimum Breakdown Voltage
IR= 5.0uA
IR= 100uA
Peak Forward Surge Current PW= 1sec.
Maximum Forward Voltage
IF= 100mA
Maximum Reverse Current
VR= 20V
VR= 75V
VR= 20V, Tj= 150
°
C
Maximum Junction Capacitance
VR= 0, f= 1 MHz
Maximum Reverse Recovery Time
IF= 10mA, VR= 6V, IRR= 1mA, RL= 100
Ω
Symbol
Ratings
Unit
MAXIMUM RATING AND ELECTRICAL CHARA
Rating 25
o
C ambient temperature unless otherwise specified.
75
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
BV
V
IFsurge
Parameter
VF
100
0.5
1.0
Conditions
A
V
uA
Repetitive Peak Reverse Voltage
IR
Continuous Reverse Voltage
Forward Voltage
Reverse Current
Mean Rectifying Current
I
F
= 10mA DC
.004 (0.1)
MECHANICAL DATA
.153(3.6)
.132(3.0)
.043 (1.1)
Sym
V
V
I
F
=
Cj
trr
V
R
= 10V DC
0.025
5.0
100mA DC
50
pF
ns
4
4
V
V
Peak forward surge current
Operating Temperature
Storage Temperature
I
F
Capacitance between terminals
C
T
T
S
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
