FM120-M
2SA1036KxLT1
THRU
Medium Power Transistor
(*32V,
*0.5A)
200V
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
FFeatures
•
High surge capability.
1) Large I
C
.
•
Guardring for overvoltage protection.
CMax.
=
*500mA
•
Ultra
I
high-speed switching.
2) Low V
CE(sat)
Ideal for low-voltage
•
Silicon epitaxial
.
planar chip, metal silicon junction.
operation.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
the material of product
3)
We declare that
product for
with RoHS
suffix "G"
•
RoHS
compliance
packing code
requirements.
Halogen free product for packing code suffix "H"
SOD-123H
WILLAS
PACKAGE
Pb Free Produc
Features
Package outline
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
3
0.071(1.8)
0.056(1.4)
1
Pb-Free package is available
Mechanical data
RoHS product for packing code suffix ”G”
•
Epoxy : UL94-V0 rated flame retardant
Halogen free product for packing code suffix “H”
2
0.040(1.0)
0.024(0.6)
SOT-23
0.031(0.8) Typ.
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.031(0.8) Typ.
FStructure
•
Polarity : Indicated by cathode band
Epitaxial
Position : Any
•
Mounting
planar type
PNP silicon transistor
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
3
1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at
FDEVICE
MARKING
25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
1)
2SA1036KQLT1 =HQ
For capacitive load, derate current by 20%
2
2)
Marking Code
2SA1036KRLT1 =HR
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
PNP
18
80
56
80
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
10
100
70
100
115
150
105
150
120
200
140
200
FAbsolute
maximum ratings (Ta = 25_C)
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
FORDERING
INFORMATION
Device
2SA1036Kx LT1G
Package
SOT-23
Shipping
3000/Tape & Reel
2012-
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
WILLAS [ WILLAS ELECTRONIC CORP ]
