WILLAS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
better reverse leakage
TRANSISTOR (PNP)
current and thermal resistance.
•
Low profile surface mounted application in order to
optimize
FEATURES
board space.
Low
•
High
power loss, high efficiency.
voltage
•
High current capability, low forward voltage drop.
High
transition frequency
•
High
surge capability.
Guardring for overvoltage protection.
•
Pb-Free package is available
•
Ultra high-speed switching.
Silicon epitaxial planar chip,
code suffix ”G”
•
RoHS product for packing
metal silicon junction.
Lead-free parts meet environmental standards of
•
Halogen free product for packing code suffix “H”
MIL-STD-19500 /228
RoHS product for packing
=25
℃
unless otherwise
•
MAXIMUM RATINGS (T
a
code suffix "G"
Halogen free product for packing code suffix "H"
SOT-89 Plastic-Encapsulate Transistors
Features
FM120-M
THRU
2SA1201
FM1200-M
Pb Free Product
Package outline
SOD-123H
SOT-89
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
1.
BASE
2.
COLLECTOR
3.
EMITTER
0.040(1.0)
0.024(0.6)
0.071(1.8)
0.056(1.4)
noted)
Unit
Symbol
V
CBO
Mechanical data
Parameter
Value
I
C
P
C
T
J
T
stg
150
Storage Temperature
-55-150
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ELECTRICAL
wave, 60Hz, resistive of inductive
=25
℃
unless otherwise specified)
CHARACTERISTICS (T
a
load.
Single phase half
For capacitive load, derate current by 20%
Parameter
im
Symbol
V
(BR)CBO
V
(BR)CEO
V
RMS
V
(BR)EBO
I
O
I
CBO
I
FSM
V
DC
V
RRM
Ratings at 25℃ ambient temperature unless otherwise specified.
ina
W
℃
℃
Test conditions
14
40
40
15
50
35
50
16
60
42
60
•
•
Junction Temperature
•
Weight : Approximated 0.011 gram
Method 2026
Collector Current -Continuous
Polarity : Indicated by cathode band
Collector Power Dissipation
Mounting Position : Any
-0.8
0.5
A
ry
Min
-120
18
80
80
-120
V
UL94-V0 rated flame
•
Epoxy :
Collector-Base Voltage
retardant
V
CEO
•
Case : Molded plastic, SOD-123H
-120
V
Collector-Emitter Voltage
,
V
EBO
•
Terminals :Plated terminals, solderable per MIL-STD-750
V
-5
Emitter-Base Voltage
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
Typ
10
100
70
100
Max
115
150
105
150
Unit
V
120
Pr
el
Collector-base breakdown voltage
Marking Code
Maximum Recurrent Peak Reverse Voltage
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
Collector-emitter breakdown voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
I
C
12
=-1mA,I
E
=0
13
20
30
20
30
200
200
I
C
=-10mA,I
B
=0
28
14
21
I
E
=-1mA,I
C
=0
V
CB
=-120V,I
E
=0
-120
56
1.0
30
40
120
V
140
V
Volts
Volts
Volts
Amps
Maximum Average Forward Rectified Current
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
-5
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
-0.1
μA
μA
Amps
℃/W
PF
℃
℃
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
R
ΘJA
C
J
T
J
I
EBO
h
FE
V
EB
=-5V,I
C
=0
V
CE
=-5V,I
C
=-100mA
-55 to +125
80
-0.1
240
-1
-55 to +150
Collector-emitter saturation voltage
CHARACTERISTICS
Base-emitter voltage
TSTG
V
CE(sat)
V
F
I
C
=-500mA,I
B
=-50mA
V
CE
=-5V,I
C
=-500mA
0.50
0.70
-
65
to +175
V
0.9
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
V
BE
0.85
0.5
10
-1
V
0.92
Volts
mAmps
Maximum Average Reverse Current at @T A=25℃
Transition frequency
@T A=125℃
f
I
R
T
C
ob
V
CE
=-5V,I
C
=-100mA
V
CB
=-10V,I
E
=0,f=1MHz
120
30
MHz
pF
NOTES:
Collector output capacitance
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
CLASSIFICATION OF h
FE
Rank
2- Thermal Resistance From Junction to Ambient
O
80-160
DO
Y
120-240
Range
Marking
2012-06
WILLAS ELECTRONIC CORP.
DY
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
