WILLAS
SOT-89 Plastic-Encapsulate Transistors
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
SOD-123
•
Batch
(PNP)
design,
TRANSISTOR
process leakage excellent power dissipation offers
better reverse
current and thermal resistance.
•
Low profile surface mounted application in order to
FEATURES
optimize board space.
•
collector
loss, high efficiency.
Low
Low power
saturation voltage
•
High current capability, low forward voltage drop.
Execllent current-to-gain characteristics
•
High surge capability.
Pb-Free package is available
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
RoHS product for packing code suffix ”G”
•
Silicon epitaxial planar chip, metal silicon junction.
Halogen free product for packing code suffix “H”
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
MAXIMUM RATINGS (T
a
for packing code suffix "H"
Halogen free product
=25℃ unless otherwise
FM120-M
2SB1386
THRU
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
SOT-89
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
1. BASE
2. COLLECTOR
3. EMITTER
0.071(1.8)
0.056(1.4)
noted)
Unit
V
V
V
A
A
W
Dimensions in inches and (millimeters)
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
Symbol
Mechanical data
Parameter
V
CBO
V
CEO
V
EBO
I
C
I
CP
*
P
C
T
J
Value
•
Epoxy : UL94-V0 rated flame retardant
-30
Collector-Base Voltage
•
Case : Molded plastic, SOD-123H
,
Collector-Emitter Voltage
-20
•
Terminals :Plated terminals, solderable per MIL-STD-750
Emitter-Base Voltage
Method 2026
-6
-5
-10
0.5
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
Continuous
Collector Current
•
Mounting
Collector
:
Current
Pulsed
Position Any
•
Weight : Approximated 0.011 gram
Collector Power Dissipation
Junction Temperature
150
℃
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at
Storage Temperature
25℃ ambient temperature unless otherwise
-55~150
specified.
T
stg
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Parameter
*Single pulse,P
W
=10ms
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
℃
Symbol
V
RRM
V
(BR)CBO
V
DC
I
O
V
(BR)CEO
I
FSM
V
(BR)EBO
R
ΘJA
I
CBO
C
J
T
J
I
EBO
TSTG
12
13
14
20
30
40
Test conditions
15
50
35
50
16
60
42
60
18
10
115
120
Min
80
Typ
100
Max
150
Unit
200
Vo
Collector-base breakdown voltage
Maximum DC Blocking Voltage
Maximum RMS Voltage
V
RMS
I
C
=-50μA,I
E
=0
20
30
14
21
28
40
-30
1.0
-20
30
-6
40
120
56
80
70
100
105
150
V
V
V
140
200
Vo
Vo
Maximum Average Forward Rectified Current
Collector-emitter breakdown voltage
I
C
=-1mA,I
B
=0
I
E
=-50μA,I
C
=0
V
CB
=-20V,I
E
=0
Am
Emitter-base breakdown voltage
Typical Thermal Resistance (Note 2)
Collector cut-off current
Operating Temperature Range
Emitter cut-off current
Storage Temperature Range
Typical Junction Capacitance (Note 1)
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Am
-0.5
μA
μA
℃
P
-55 to
V
EB
=-5V,I
C
=0
+125
-
65
to +175
-55 to +150
-0.5
℃
℃
DC current gain
Collector-emitter saturation voltage
Maximum Forward Voltage at 1.0A DC
Transition frequency
Rated DC Blocking Voltage
h
FE
CHARACTERISTICS
V
CE
=-2V,I
C
=-500mA
I
C
=-4A,I
B
=-100mA
0.50
V
CE
=-6V,I
C
=-50mA,f=30MHz
V
CB
=-20V,I
E
=0,f=1MHz
0.70
82
0.85
0.5
10
390
-1
0.9
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
V
CE(sat)
V
F
f
T
I
R
C
ob
V
MHz
pF
0.92
Vo
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
120
60
mA
Collector output capacitance
NOTES:
2- Thermal Resistance From Junction to Ambient
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
CLASSIFICATION OF h
FE
Rank
Range
Marking
P
82-180
BHP
Q
120-270
BHQ
R
180-390
BHR
2012-06
WILLAS ELECTRONIC CORP.
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
