SOT-89 Plastic-Encapsulate Transistors
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
SOD-123
•
Batch process design, excellent power dissipation offers
WILLAS
FM120-M
2SB1440
THRU
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
SOD-123H
better reverse leakage current and thermal resistance.
TRANSISTOR (PNP)
•
Low profile surface mounted application in order to
FEATURES
optimize board space.
•
Low power loss, high
saturation
Low collector-emitter
efficiency.
voltage V
CE(sat)
•
High current capability, low forward voltage
For low-frequency output amplification
drop.
•
High surge capability.
Pb-Free package is available
•
Guardring for overvoltage protection.
•
Ultra high-speed
packing
RoHS product for
switching.
code suffix ”G”
•
Silicon epitaxial planar chip, metal silicon junction.
Halogen free product
environmental
code suffix “H”
•
Lead-free parts meet
for packing
standards of
MIL-STD-19500
(T
a
=25℃ unless otherwise
MAXIMUM RATINGS
/228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
SOT-89
0.146(3.7)
0.130(3.3)
1.
BASE
2.
COLLECTOR
3.
EMITTER
1
2
3
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
noted)
Unit
V
V
V
A
mW
℃
Symbol Para
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Mechanical data
meter
Value
-50
•
Epoxy : UL94-V0 rated flame retardant
Collector-Emitter Voltage
-50
•
Case : Molded plastic, SOD-123H
,
Emitter-Base
terminals,
-5
•
Terminals :Plated
Voltage
solderable per MIL-STD-750
Method 2026
Collector Current -Continuous
Collector-Base Voltage
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
-2
500
150
-55~150
℃
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ELECTRICAL
ambient temperature unless otherwise specified.
otherwise specified)
CHARACTERISTICS (T
a
=25℃ unless
Ratings at 25℃
Storage Temperature
•
Polarity : Indicated by cathode band
Collector Power Dissipation
•
Mounting Position : Any
Junction Temperature
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
Single phase half wave, 60Hz, resistive of inductive load.
Parameter
Symbol
For capacitive load, derate current by 20%
Marking Code
Test conditions
I
C
=-10μA, I
E
=0
12
20
14
13
30
21
14
40
28
40
15
50
35
50
16
60
42
60
Min
-50
-50
18
80
56
Typ
10
100
70
100
Max
115
150
105
150
Unit
V
120
200
140
Collector-base breakdown voltage
Collector-emitter breakdown voltage
voltage
RATINGS
V
(BR)CBO
V
RMS
I
O
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Emitter-base breakdown
V
RRM
= 0
V
(BR)CEO
I
C
=-1mA, I
B
V
DC
V
(BR)EBO
20
30
I
E
=-10μA, I
C
=0
V
Vol
Vol
-5
80
1.0
30
40
120
120
V
200
μA
μA
Vol
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Emitter cut-off current
Collector cut-off current
= 0
V
CB
=-50V, I
E
I
CBO
I
FSM
R
ΘJA
-1
Am
Typical Thermal Resistance (Note 2)
Operating Temperature Range
DC current gain
Storage Temperature Range
= 0
V
EB
=-5V, I
C
I
EBO
-1
340
Am
Typical Junction Capacitance (Note 1)
h
C
J
FE1
T
J
TSTG
h
FE2
V
CE
=-2V, I
C
-200mA
=
-55 to +125
℃/W
PF
-55 to +150
℃
V
CE
=-2V, I
C
-1A
=
-
65
to +175
60
℃
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
CHARACTERISTICS
Collector-emitter saturation voltage
FM1200-MH
= -50mA
I
C
=-1A, I
B
-0.3
V
CE(sat)
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
V
SYMBOL
UN
Base- emitter saturation voltage
Maximum Average Reverse Current at @T A=25℃
NOTES:
= -50mA
I
C
=-1A, I
B
V
BE(sat)
I
R
V
F
0.50
0.70
0.5
10
0.85
0.9
0.92
Vol
-1..2
V
MHz
Transition frequency
@T A=125℃
mAm
f
T
ob
V
CE
=-10V, I
C
50mA, f 200MHz
= =
V
CB
=-10V, I
E
=0, f=1MHz
80
60
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
C
Collector output capacitance
pF
CLASSIFICATION OF h
FE1
Rank
Range
Marking
2- Thermal Resistance From Junction to Ambient
R
120-240
1L
S
170-340
2012-06
WILLAS ELECTRONIC CORP.
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
