WILLAS
SOT-89 Plastic-Encapsulate Transistors
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
TRANSISTOR (PNP)
board space.
optimize
FEATURES
•
Low power loss, high efficiency.
•
High current capability, low forward
Large collector power dissipation P
C
voltage drop.
•
High surge capability.
Pb-Free
Guardring for overvoltage protection.
•
package is available
RoHS product for packing code suffix ”G”
•
Ultra high-speed switching.
•
free product for packing
metal silicon junction.
Halogen
Silicon epitaxial planar chip,
code suffix “H”
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
FM120-M
2SB766
THRU
FM1200-M
PACKAGE
Pb Free Prod
Features
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
SOT-89
1.
BASE
0.040(1.0)
0.024(0.6)
Symbol
Mechanical data
Collector-Base Voltage
Parameter
Value
-30
Unit
V
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Method 2026
Collector Current -Continuous
-1
500
A
℃
Junction Temperature
Storage Temperature
Single phase half wave, 60Hz, resistive of inductive load.
Parameter
For capacitive load, derate current by 20%
Symbol
Marking Code
im
12
14
℃
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
unless otherwise specified.
(T
a
=25℃ unless otherwise specified)
Ratings at 25℃ ambient temperature
-55~150
Test conditions
13
21
30
14
40
28
40
15
50
35
50
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
ina
150
V
DC
20
•
Polarity : Indicated by cathode band
Collector Power Dissipation
mW
ry
3.
EMITTER
Min
16
•
Epoxy : UL94-V0 rated flame retardant
Collector-Emitter Voltage
-25
V
•
Case : Molded plastic, SOD-123H
,
Emitter-Base Voltage
V
•
Terminals :Plated terminals, solderable
-5
MIL-STD-750
per
2.
COLLECTOR
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
Typ
18
80
56
80
1.0
30
Max
10
100
70
100
Unit
115
120
200
140
200
RATINGS
Collector-base breakdown voltage
-30
V
(BR)CBO
SYMBOL
FM120-M
H
=0
I
C
=-10μA, I
E
FM130-MH
FM140-MH FM150-MH FM160-MH
I
C
V
(BR)CEO
V
RRM
=-2mA, I
B
=0
30
20
V
(BR)EBO
V
RMS
=-10μA, I
C
=0
I
E
I
CBO
V
I
O
CB
=-20V, I
E
=0
-25
60
-5
42
60
FM180-MH FM1100-MH FM1150-MH FM1200
V
Pr
el
Collector-emitter breakdown voltage
Maximum Recurrent Peak Reverse Voltage
Emitter-base breakdown voltage
Maximum DC Blocking Voltage
Maximum RMS Voltage
V
150
V
105
150
Collector cut-off current
Maximum Average Forward Rectified Current
-0.1
-0.1
μA
μA
I
EBO
Emitter cut-off current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
V =-4V, I
C
=0
I
FSM
EB
DC current gain
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
h
FE(1)
h
FE(2)
V
CE(sat)
R
ΘJA
V
CE
=-10V, I
C
=-500mA
85
C
J
CE
=-5V, I
C
=-1A
V
-55 to +125
T
J
40
50
120
340
-55 to +150
Collector-emitter saturation voltage
Storage Temperature Range
Base-emitter saturation voltage
CHARACTERISTICS
Transition frequency
Maximum Forward Voltage at 1.0A DC
I
C
TSTG
=-500mA, I
B
=-50mA
-0.2
-
65
to +175
-0.4
V
I
C
=-500mA,
FM130-MH
-0.85
-1.2
V
V
BE(sat)
SYMBOL
FM120-MH
I
B
=-50mA
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200
f
T
V
F
I
R
Maximum Average Reverse Current at @T A=25℃
V
CE
=-10V, I
C
=-50mA, f=200MHz
0.50
0.70
0.5
10
200
20
0.85
MHz
30
pF
0.9
0.92
Rated DC Blocking Voltage
Collector output capacitance
@T A=125℃
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
NOTES:
1- Measured at 1 MHZ and
CLASSIFICATION OF h
applied reverse voltage of 4.0 VDC.
FE(1)
2- Thermal Resistance From Junction to Ambient
Rank
Range
Q
85-170
AQ
R
120-240
AR
S
170-340
AS
Marking
2012-06
WILLAS ELECTRONIC CO
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
