SOT-89 Plastic-Encapsulate Transistors
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
SOD-123
PACKAGE
WILLAS
FM120-M
2SC1766
THRU
FM1200-M
Pb Free Produc
Features
TRANSISTOR (NPN)
•
Batch process design, excellent power dissipation offers
better
FEATURES
reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
Pb-Free package is available
optimize board space.
Package outline
SOT-89
SOD-123H
MIL-STD-19500 /228
APPLICATIONS
•
RoHS product for packing code suffix "G"
Power Amplifier
RoHS product
loss, high efficiency.
•
Low power
for packing code suffix ”G”
•
High current capability, low forward voltage drop.
Halogen free product for packing code suffix “H”
•
High surge capability.
Small Flat Package
•
Guardring for overvoltage protection.
•
Speed Switching Time
High
Ultra high-speed switching.
•
Low
Silicon epitaxial planar chip, metal
voltage
Collector-emitter saturation
silicon junction.
•
Lead-free parts meet environmental standards of
Halogen free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
1. BASE
2. COLLECTOR
3. EMITTER
0.071(1.8)
0.056(1.4)
ry
Value
50
50
5
0.031(0.8) Typ.
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
•
Epoxy : UL94-V0 rated flame retardant
Symbol
Parameter
•
Case : Molded plastic, SOD-123H
,
•
Collector-Base Voltage
V
CBO
Terminals :Plated terminals, solderable per MIL-STD-750
V
CEO
Method 2026
Collector-Emitter Voltage
Mechanical data
0.040(1.0)
0.024(0.6)
Unit
V
V
0.031(0.8) Typ.
V
EBO
P
C
•
Polarity : Indicated by cathode band
Emitter-Base Voltage
•
Mounting Position : Any
Collector Current
I
C
•
Weight : Approximated 0.011 gram
Collector Power Dissipation
Ratings at 25℃ ambient
Temperature
Junction
temperature unless otherwise specified.
T
j
Single phase half wave, 60Hz, resistive of inductive load.
Storage Temperature
T
stg
For capacitive load, derate current by 20%
RATINGS
im
R
θJA
MAXIMUM RATINGS
Junction To Ambient
Thermal Resistance From
AND ELECTRICAL CHARACTERISTICS
250
℃/W
150
℃
℃
-55~+150
Marking Code
12
13
15
specified)
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise
14
Maximum Recurrent Peak Reverse Voltage
Pr
el
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
ina
V
2
A
500
mW
V
RRM
20
30
40
50
Dimensions in inches and (millimeters)
16
60
18
80
80
10
100
100
115
150
150
120
200
140
200
Maximum RMS Voltage
Parameter
Collector-base breakdown voltage
Maximum DC Blocking Voltage
V
RMS
Symbol
V
DC
V
(BR)CBO
I
O
Peak Forward Surge Current 8.3
voltage
Emitter-base breakdown
ms single half sine-wave
V
(BR)EBO
I
FSM
Collector-emitter breakdown voltage
Collector cut-off current
superimposed on rated load (JEDEC method)
Maximum Average Forward Rectified Current
I
C
=100µA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=100µA,I
C
=0
V
CB
=50V,I
E
=0
V
EB
=5V,I
C
=0
14
21
28
Test conditions
20
30
40
35
50
42
Typ
56
Max
70
Unit
105
Min
50
60
50
5
V
(BR)CEO
I
CBO
1.0
30
40
120
V
V
V
Emitter cut-off current
(Note 1)
Typical Junction Capacitance
DC current gain
Range
Storage Temperature
Operating Temperature Range
Typical Thermal Resistance (Note 2)
R
ΘJA
0.1
0.1
µA
µA
I
EBO
J
C
T
J
h
FE(1)
TSTG
h
FE(2)
*
-55
=0.5A
V
CE
=2V, I
C
to +125
70
20
0.70
V
CE
=2V, I
C
=2A
0.50
I
C
=1A,I
B
=50mA
-
65
to +175
-55
240
to +150
Collector-emitter saturation voltage
CHARACTERISTICS
Maximum Forward Voltage at
voltage
Base-emitter saturation
1.0A DC
Maximum Average Reverse
Transition frequency
Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
I
C
=1A,I
FM130-MH
0.5
V
SYMBOL
FM120-MH
B
=50mA
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
V
CE(sat)
FM1150-MH
FM1200-MH
V
F
V
BE(sat)
0.85
1.2
0.5
120
10
V
MHz
0.9
0.92
f
T
I
R
V
CE
=2V,I
C
=0.5A,f=100MHz
CLASSIFICATION OF h
FE(1)
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
P
RANK
Q
120–270
Q1766
Y
180–390
Y1766
2- Thermal Resistance From Junction to Ambient
RANGE
82–180
P1766
MARKING
*Pulse test: pulse width
≤300μs,
duty cycle≤ 2.0%.
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
WILLAS [ WILLAS ELECTRONIC CORP ]
