SOT-89 Plastic-Encapsulate Transistors
TRANSISTOR (NPN)
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
FEATURES
profile surface mounted application in order to
•
Low
Low
optimize board space.
Saturation Voltage
•
Low power loss, high efficiency.
Excellent h
FE
Characteristics
•
High current capability, low forward voltage drop.
•
High surge
the 2SA1797
Complements
capability.
•
Guardring for overvoltage protection.
Pb-Free
high-speed
is available
•
Ultra
package
switching.
RoHS product for packing code suffix "G"
junction.
•
Silicon epitaxial planar chip, metal silicon
Halogen free
parts meet environmental standards of
•
Lead-free
product for packing code suffix "H"
MIL-STD-19500 /228
MAXIMUM RATINGS
packing code
unless otherwise noted)
(T =25℃
suffix "G"
•
RoHS product for
a
Halogen free product for packing code suffix "H"
Symbol
Parameter
WILLAS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
FM120-M
2SC4672
THRU
FM1200-M
Pb Free Produc
Features
Package outline
SOT-89
SOD-123H
1. BASE
2. COLLECTOR
3. EMITTER
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
V
CBO
Mechanical data
Collector-Base Voltage
Value
60
50
6
2
500
250
150
-55~+150
Unit
V
V
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
•
Epoxy : UL94-V0 rated flame retardant
Collector-Emitter Voltage
V
CEO
•
Case : Molded plastic, SOD-123H
Emitter-Base Voltage
V
EBO
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
I
C
Collector Current
Method 2026
V
A
0.031(0.8) Typ.
Collector Power Dissipation
P
C
•
Polarity : Indicated by cathode band
Thermal Resistance From Junction To Ambient
R
θJA
Mounting Position : Any
•
Junction Temperature
T
j
•
Weight : Approximated 0.011 gram
T
stg
Storage Temperature
mW
Dimensions in inches and (millimeters)
℃/W
℃
℃
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Single phase half wave, 60Hz, resistive of inductive load.
Ratings at 25℃ ambient temperature unless otherwise specified.
For capacitive load, derate current by 20%
Parameter
Collector-base breakdown voltage
Marking Code
Maximum Recurrent
breakdown voltage
Collector-emitter
Peak Reverse Voltage
Maximum RMS
Emitter-base
Voltage
breakdown voltage
RATINGS
Symbol
V
(BR)CBO
V
RRM
V
(BR)CEO
V
RMS
V
(BR)EBO
V
DC
I
O
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Test
conditions
14
40
28
40
Min
60
16
6
Typ
Max
Unit
I
C
=50µA,I
13
E
=0
12
20
30
I
C
=1mA,I
B
=0
14
21
20
30
15
50
35
50
60
50
42
60
18
80
56
80
10
100
70
100
V
115
V
150
105
150
120
200
140
200
Collector cut-off current
Maximum DC Blocking Voltage
I
E
=50µA,I
C
=0
V
CB
=60V,I
E
=0
V
EB
=5V,I
C
=0
V
Emitter cut-off current
DC current gain
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
I
CBO
I
EBO
FSM
h
I
FE
V
CE
=2V, I
C
=500mA
I
C
=1A,I
B
=50mA
1.0
82
30
40
120
210
0.1
0.1
µA
µA
390
Collector-emitter saturation voltage
Typical Thermal Resistance (Note 2)
Transition frequency
(Note 1)
Typical Junction Capacitance
Operating Temperature Range
Collector output capacitance
Storage Temperature Range
V
CE(sat)
R
ΘJA
f
T
J
C
C
T
J
ob
TSTG
0.35
V
MHz
pF
V
CE
=2V,I
C
=0.5A, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
-55 to +125
-55 to +150
-
65
to +175
25
CLASSIFICATION OF
h
FE
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
RANK
P
Maximum Average Reverse Current at @T A=25℃
V
F
I
R
Q
120–270
DKQ
0.50
R
DKR
0.70
0.5
10
0.85
0.9
0.92
Rated DC Blocking Voltage
RANGE
NOTES:
@T A=125℃
82–180
180–390
MARKING
DKP
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC CORP
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
