WILLAS
SOT-89 Plastic-Encapsulate Transistors
TRANSISTOR (NPN)
FEATURES
High Breakdown Voltage and Current
Excellent DC Current Gain Linearity
2SD1898
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
Pb-Free package is available
RoHS product for packing code suffix ”G”
Halogen free product for packing code suffix “H”
Low Collector-Emitter Saturation Voltage
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
100
80
5
1
500
250
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Test conditions
I
C
=50µA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=50µA,I
C
=0
V
CB
=80V,I
E
=0
V
EB
=4V,I
C
=0
V
CE
=3V, I
C
=500mA
I
C
=500mA,I
B
=20mA
V
CE
=10V,I
C
=50mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
100
20
82
Min
100
80
5
1
1
390
0.4
V
MHz
pF
Typ
Max
Unit
V
V
V
µA
µA
CLASSIFICATION OF
h
FE
RANK
RANGE
MARKING
P
82–180
Q
120–270
DF
R
180–390
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
