1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
TRANSISTOR (NPN)
excellent power dissipation offers
•
Batch process design,
better reverse leakage current and thermal resistance.
FEATURES
surface mounted application in order to
•
Low profile
optimize board space.
Low Collector-Emitter Saturation Voltage
•
Low power loss, high efficiency.
Large Collector Power Dissipation
•
High current capability, low forward voltage drop.
•
High surge capability.
Package
Mini Power Type
•
Guardring for overvoltage protection.
Pb-Free package is available
•
Ultra high-speed switching.
RoHS product for
chip, metal silicon junction.
•
Silicon epitaxial planar
packing code suffix ”G”
•
Lead-free parts meet environmental standards of
Halogen free product for packing code suffix “H”
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
MAXIMUM RATINGS (T =25℃ unless otherwise noted)
SOT-89 Plastic-Encapsulate Transistors
Features
WILLAS
FM120-M
THRU
2SD874
FM1200-M
Pb Free Product
Package outline
SOT-89
SOD-123H
1. BASE
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
2. COLLECTOR
0.071(1.8)
0.056(1.4)
3. EMITTER
Mechanical data
a
R
θJA
Thermal Resistance From Junction To Ambient
Junction Temperature
150
T
j
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum RMS Voltage
Maximum Recurrent Peak Reverse Voltage
Parameter
Pr
el
Marking Code
SYMBOL
FM120-M
H FM130-MH
FM140-MH
specified)
RATINGS
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise
FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
im
12
20
V
RRM
Symbol
V
RMS
V
DC
I
O
Ratings at
T
25℃ ambient temperature unless otherwise specified.
Storage Temperature
stg
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
ina
500
250
mW
℃
℃/W
℃
-55~+150
14
20
•
Polarity : Indicated by cathode band
Collector Current
I
C
•
Mounting Position : Any
Collector Power Dissipation
P
C
•
Weight : Approximated 0.011 gram
V
EBO
Method 2026
Emitter-Base Voltage
Maximum DC Blocking Voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
C
=10µA,I
E
=0
30
40
13
14
15
30
40
Test conditions
50
21
28
35
50
ry
25
5
V
V
1
A
16
60
42
60
18
Min
80
Parameter
Epoxy :
•
Symbol
UL94-V0 rated flame retardant
Collector-Base Voltage
V
CBO
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Collector-Emitter Voltage
V
CEO
Value
0.031(0.8) Typ.
Unit
V
0.040(1.0)
0.024(0.6)
30
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
30
1.0
5
30
56
80
10
115
120
Typ
100
Max
150
Unit
200
70
105
140
100
150
Volts
Volts
Volts
Amps
V
Maximum Average Forward Rectified Current
Collector-emitter breakdown voltage
I
C
=2mA,I
B
=0
25
V
V
200
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
I
FSM
I
CBO
I
E
=10µA,I
C
=0
V
CB
=20V,I
E
=0
Amps
℃/W
PF
℃
℃
0.1
µA
µA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
R
ΘJA
I
EBO
C
J
T
J
TSTG
V
EB
=4V,I
C
=0
-55 to +125
h
FE(1)
h
FE(2)
V
CE(sat)
f
T
C
ob
V
CE
=10V, I
C
=500mA
V
CE
=5V, I
C
=1A
I
C
=500mA,I
B
=50mA
40
120
85
0.1
340
Collector-emitter saturation voltage
Base-emitter saturation voltage
CHARACTERISTICS
-
65
to +175
50
-55 to +150
0.4
0.85
200
V
0.9
MHz
0.92
I
C
=500mA,I
B
=50mA
1.2
V
V
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
SYMBOL
BE(sat)
V
F
0.50
0.70
V
CE
=10V,I
C
=50mA, f=200MHz
Volts
mAmps
Maximum Forward Voltage at 1.0A DC
Transition frequency
Rated DC Blocking Voltage
Maximum Average Reverse Current at @T A=25℃
Collector output capacitance
@T A=125℃
I
R
V
CB
=10V, I
E
=0, f=1MHz
0.5
10
20
pF
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
CLASSIFICATION OF
h
FE
(
1
)
RANK
RANGE
MARKING
Q
85–170
ZQ
R
120–240
ZR
S
170–340
ZS
2012-06
WILLAS ELECTRONIC CORP.
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
