1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
N-channel MOSFET
Features
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOT-23 Plastic-Encapsulate
MOSFETS
WILLAS
FM120-M
THRU
2SK3018LT1
FM1200-M
Pb Free Product
Package outline
SOD-123H
FEATURES
surface mounted application in order to
•
Low profile
optimize board space.
Low on-resistance
•
Low power loss, high efficiency.
switching speed
High
•
Fast
current capability, low forward voltage drop.
High
voltage drive
•
Low
surge capability.
makes this device ideal for portable equipment
Guardring for overvoltage protection.
•
Easily designed drive circuits
•
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
•
Easy to parallel
Lead-free parts meet environmental
•
Pb-Free package is available
standards of
RoHS product for
for packing code suffix ”G”
•
RoHS product
packing code suffix "G"
Halogen free product for packing code suffix "H"
Halogen free product for packing code suffix “H”
MIL-STD-19500 /228
SOT-23
0.012(0.3) Typ.
0.146(3.7)
0.130(3.3)
1. GATE
2. SOURCE
3. DRAIN
0.071(1.8)
0.056(1.4)
•
Epoxy : UL94-V0 rated flame retardant
MOSFET MAXIMUM RATINGS (T
a
= 25°C unless otherwise noted)
•
Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
Units
Symbol Parameter
Value
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
V
DS
Drain-Source
Voltage
Method 2026
Mechanical data
Marking: KN
Equivalent circuit
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
30
V
•
Gate-Source Voltage
V
GSS
Polarity : Indicated by cathode band
Continuous
: Any
I
D
•
Mounting Position
Drain Current
P
D
T
J
±20
0.1
0.35
-55~+150
357
13
30
21
V
A
W
℃
℃
/W
14
40
28
40
15
50
35
50
Dimensions in inches and (millimeters)
•
Weight : Approximated 0.011 gram
Power Dissipation
Junction Temperature
AND ELECTRICAL CHARACTERISTICS
150
MAXIMUM RATINGS
℃
Ratings at 25℃
Storage Temperature
ambient temperature unless otherwise specified.
T
stg
Single phase half wave, 60Hz, resistive of inductive load.
Thermal Resistance, Junction-to-Ambient
R
θJA
For capacitive load, derate current by 20%
RATINGS
MOSFET ELECTRICAL CHARACTERISTICS(T
a
=25℃ unless otherwise noted)
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
Parameter
V
RRM
Test Condition
Symbol
V
RMS
V
DC
I
O
14
12
20
Min
30
16
60
Off Characteristics
Maximum DC Blocking Voltage
Drain-Source Breakdown Voltage
42
1.0
30
Typ
18
80
56
80
Max
10
100
70
100
Units
V
nA
V
Ω
Ω
mS
115
150
105
150
120
200
140
200
Volts
Volts
Volts
Amps
Maximum Average Forward Rectified Current
V
DS
V
GS
= 0V, I
D
= 10µA
V
DS
=30V,V
GS
= 0V
20
30
60
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Zero Gate Voltage Drain Current
Gate –Source leakage current
I
DSS
0.2
±500
µA
I
GSS
I
FSM
V
GS
=±20V, V
DS
= 0V
C
J
Amps
℃/W
PF
℃
℃
Gate Threshold Voltage
Typical Thermal Resistance (Note 2)
V
GS(th)
ΘJA
V
DS
= 3V, I
D
=100µA
R
R
DS(on)
T
J
g
FS
V
F
I
R
Typical Junction Capacitance (Note 1)
Storage Temperature Range
Drain-Source On-Resistance
Operating Temperature Range
V
GS
= 4V, I
D
= 10mA
V
GS
=2.5V,I
D
=1mA
0.8
40
120
1.5
-55 to +125
-
65
to +175
-55 to +150
8
TSTG
13
Forward Transconductance
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
Output Capacitance
V
DS
=3V, I
D
= 10mA
0.50
Dynamic Characteristics*
CHARACTERISTICS
20
0.70
0.5
10
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
Input Capacitance
Maximum Average Reverse Current at @T A=25℃
C
iss
@T A=125℃
oss
C
13
9
4
15
0.85
pF
0.9
0.92
Volts
mAmps
V
DS
=5V,V
GS
=0V,f =1MHz
pF
pF
ns
ns
ns
ns
Reverse
NOTES:
Transfer Capacitance
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
GS
=5V, V
DD
=5V,
I
D
=10mA, Rg=10Ω, R
L
=500Ω,
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Switching Characteristics*
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
35
80
80
* These parameters have no way to verify.
2012-06
WILLAS ELECTRONIC CORP.
2012-10
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
