WILLAS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
SOT-523 Plastic-Encapsulate
MOSFETS
FM120-M
THRU
2SK3019TT1
FM1200-M
Pb Free Product
Package outline
N-channel MOSFET
Features
FEATURES
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
Low on-resistance
•
Low profile surface mounted application in order to
SOT-523
optimize board space.
Fast
switching speed
0.146(3.7)
•
Low power loss, high efficiency.
0.130(3.3)
Low
voltage drive
makes this device ideal for portable equipment
•
High current capability, low forward voltage drop.
Easily designed
drive
circuits
•
High surge capability.
1
for overvoltage protection.
•
Guardring
parallel
1. GATE
Easy to
•
Ultra high-speed switching.
2. SOURCE
Pb-Free package is available
•
Silicon epitaxial planar chip, metal silicon junction.
3. DRAIN
RoHS product for
environmental standards
•
Lead-free parts meet
packing code suffix ”G”
of
MIL-STD-19500 /228
Halogen free product for packing code suffix “H”
•
RoHS product for packing code suffix "G"
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Halogen free product for packing code suffix "H"
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
MOSFET
:
MAXIMUM RATINGS (T
a
= 25°C unless otherwise noted)
•
Case Molded plastic, SOD-123H
0.031(0.8) Typ.
,
Units
Symbol Parameter
terminals, solderable per MIL-STD-750
Value
•
Terminals :Plated
V
DS
Equivalent circuit
Marking: KN
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
R
θJA
P
D
•
Polarity : Indicated by cathode band
Gate-Source Voltage
V
GSS
•
Mounting Position : Any
Continuous Drain Current
I
D
•
Weight : Approximated 0.011 gram
Power Dissipation
Drain-Source
Voltage
Method 2026
30
±20
0.1
833
0.15
150
-55~+150
V
V
A
℃
/W
W
℃
℃
10
100
70
Max
100
115
150
105
Units
150
120
200
140
200
Dimensions in inches and (millimeters)
Thermal Resistance, Junction-to-Ambient
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Junction Temperature
T
J
Single phase half wave, 60Hz, resistive of inductive load.
For
T
stg
capacitive load, derate current by 20%
Storage Temperature
MOSFET
Marking Code
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
12
13
14
15
16
18
V
RRM
V
DC
I
O
20
30
40
50
60
60
80
14
21
V
RMS
Test Condition
Symbol
20
30
28
40
35
50
42
Min
1.0
30
40
0.8
120
56
Typ
80
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
Volts
Volts
Volts
Amps
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Parameter
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Off Characteristics
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
DS
V
GS
= 0V, I
D
= 10µA
30
V
1
µA
µA
V
Ω
Ω
mS
pF
pF
pF
ns
ns
ns
ns
0.9
I
DSS
I
FSM
V
DS
=30V,V
GS
= 0V
V
DS
= 3V, I
D
=100µA
V
GS
= 4V, I
D
= 10mA
V
GS
=2.5V,I
D
=1mA
V
DS
=3V, I
D
= 10mA
0.50
0.70
-55 to +125
Amps
℃/W
PF
℃
℃
Gate –Source leakage current
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Gate Threshold Voltage
Operating Temperature Range
Storage Temperature Range
I
GSS
ΘJA
V
GS
=±20V, V
DS
= 0V
R
C
V
GS(th)
J
T
J
TSTG
R
DS(on)
±1
1.5
8
13
-55 to +150
Drain-Source On-Resistance
Forward Transconductance
CHARACTERISTICS
-
65
to +175
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
Input Capacitance
g
FS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
Dynamic Characteristics*
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
C
iss
V
F
I
R
20
0.85
0.5
10
0.92
Volts
mAmps
13
9
4
15
Output
NOTES:
Capacitance
C
oss
C
rss
V
DS
=5V,V
GS
=0V,f =1MHz
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Reverse Transfer Capacitance
Switching Characteristics*
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t
d(on)
t
r
t
d(off)
t
f
V
GS
=5V, V
DD
=5V,
I
D
=10mA, Rg=10Ω, R
L
=500Ω,
35
80
80
2012-06
* These parameters have no way to verify.
WILLAS ELECTRONIC CORP.
2012-0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
