WILLAS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
SOT-723 Plastic-Encapsulate MOSFETS
200V
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
N-Channel
loss, high efficiency.
•
Low power
MOSFET
•
High current capability, low forward voltage drop.
FEATURES
•
High surge capability.
Low
for overvoltage
•
Guardring
on-resistance
protection.
•
Ultra high-speed switching.
Fast switching speed
•
Silicon epitaxial planar chip, metal silicon junction.
Low
parts meet environmental standards
ideal for
•
Lead-free
voltage drive makes this device
of
MIL-STD-19500 /228
Drive circuits can be simple
•
RoHS product for packing code suffix "G"
Parallel use
for packing code suffix "H"
Halogen free product
is easy
SOD-123H
FM120-M
THRU
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
SOT-723
0.071(1.8)
0.056(1.4)
portable equipment
1. GATE
2. SOURCE
3. DRAIN
0.040(1.0)
0.024(0.6)
Mechanical data
•
Epoxy : UL94-V0
APPLICA TIONS
rated flame retardant
•
Case : Molded plastic, SOD-123H
Interfacing , Switching
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
MARKING:KN
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Method 2026
Dimensions in inches and (millimeters)
KN
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Pb-Free package is available
SYMBOL
RATINGS
RoHS product for packing code suffix ”G”
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH
Marking Code
12
13
14
15
16
Halogen free product for packing code suffix “H”
20
30
40
50
60
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
V
RRM
V
RMS
18
80
56
10
100
70
115
150
105
120
200
140
200
Volts
Volts
Volts
Amps
14
21
28
35
42
the
Maximum
*A protection diode is included between
V
DC
gate and the source terminals to protect the diode against static electricity
DC Blocking Voltage
20
30
40
50
60
80
100
150
Maximum
when the product is in use. Use a protection circuit when the fixed voltages are exceeded.
Average Forward Rectified Current
I
O
1.0
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum ratings (T
a
=25℃
I
FSM
R
ΘJA
C
J
T
J
TSTG
SYMBOL
30
Amps
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
unless otherwise noted)
Typical Junction Capacitance (Note 1)
-55 to +125
Symbol
40
120
-55 to +150
℃/W
PF
Parameter
Drain-source voltage
Gate-source voltage
CHARACTERISTICS
V
V
GS
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
±20
FM120-MH
FM130-MH
I
D
0.50
P
D
R
θJA
T
J
T
stg
0.70
0.5
10
V
DS
-
65
to +175
Value
Units
℃
℃
UNIT
Volts
mAmps
30
Maximum Forward Voltage at
current
Continuous drain
1.0A DC
Rated DC Blocking Voltage
V
F
@T A=125℃
Maximum Average Reverse Current at @T A=25℃
±100
0.15
833
150
0.85
0.9
mA
0.92
Power dissipation
I
R
W
℃/W
℃
Thermal resistance from junction to ambient
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Junction temperature
Storage temperature
2- Thermal Resistance From Junction to Ambient
* Pw≤10µs
,Duty cycle≤1%
-55 ~+150
2012-06
WILLAS ELECTRONIC CORP.
2012-0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
