WILLAS
SOT-23 Plastic-Encapsulate Transistors
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
TRANSISTOR (PNP)
board space.
optimize
FEATURES
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
Pb-Free
High surge capability.
•
package is available
•
Guardring
packing code suffix ”G”
RoHS product for
for overvoltage protection.
•
Ultra high-speed switching.
Halogen
Silicon epitaxial planar chip, metal silicon junction.
•
free product for packing code suffix “H”
Collector current: I
C
=0.5A
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
MARKING :
Halogen free product for packing code suffix "H"
2TY
FM120-M
8550SLT1
THRU
FM1200-M
PACKAGE
Pb Free Prod
Features
Package outline
SOT-23
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
1. BASE
2. EMITTER
3. COLLECTOR
0.071(1.8)
0.056(1.4)
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
•
Epoxy : UL94-V0 rated flame retardant
•
Symbol
Case : Molded plastic, SOD-123H
Parameter
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Mechanical data
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Value
-40
-25
-5
-0.5
0.3
150
-55-150
Unit
0.031(0.8) Typ.
V
V
•
Polarity : Indicated by cathode band
Emitter-Base
Any
•
Mounting Position :
Voltage
Collector Current -Continuous
•
Weight : Approximated 0.011 gram
Collector Power Dissipation
Ratings at 25℃ ambient temperature unless otherwise specified.
Storage
60Hz, resistive
Single phase half wave,
Temperature
of inductive load.
For capacitive load, derate current by 20%
RATINGS
Collector-Emitter Voltage
Method 2026
Dimensions in inches and (millimeters)
V
A
W
℃
℃
Junction Temperature
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH
SYMBOL
FM120-M
FM1200
Marking Code
Parameter
Maximum Recurrent Peak Reverse Voltage
Collector-base breakdown voltage
Maximum DC Blocking Voltage
Collector-emitter breakdown voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
V
RRM
V
RMS
V
DC
Symbol
20
V
(BR)CBO
20
14
12
13
14
15
Test conditions
30
40
50
16
60
42
60
Min
80
-40
1.0
-25
30
56
80
18
Max
100
70
100
10
Unit
150
V
V
V
105
115
120
200
140
200
Maximum RMS Voltage
I
30
= -100
μ
A, I
E
=0
C
40
50
I
C
=-1mA, I
B
=0
I
E
= -100
μ
A, I
C
=0
21
28
35
150
Emitter-base breakdown
(JEDEC method)
superimposed on rated load
voltage
Collector cut-off current
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Typical Thermal Resistance (Note 2)
I
O
V
(BR)CEO
I
FSM
V
(BR)EBO
I
CBO
I
CEO
-5
R
ΘJA
C
J
T
J
TSTG
-55 to +125
V
= -40V, I
E
=0
CB
40
120
-0.1
-0.1
-
65
to +175
-55 to +150
μ
A
μ
A
0.9
Collector cut-off current
Storage Temperature Range
V
CE
= -20V, I
B
=0
CHARACTERISTICS
Emitter cut-off current
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
DC current gain
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
A
SYMBOL
I
EBO
V
EB
= -3V, I
C
=0
-0.1
μ
FM1150-MH
FM1200-
V
F
I
R
0.50
0.70
0.85
0.92
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
V
CE
= -1V, I
C
= -50mA
V
CE
= -1V, I
C
= -500mA
I
C
=-500mA, I
B
= -50mA
I
C
=-500mA, I
B
= -50mA
V
CE
= -6V, I
C
= -20mA
0.5
120
10
400
@T A=125℃
NOTES:
50
-0.6
-1.2
150
V
V
MHz
Collector-emitter saturation voltage
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Base-emitter saturation voltage
Transition frequency
f
T
f=
30MHz
CLASSIFICATION OF h
FE(1)
Rank
2012-06
Range
L
120-200
200-350
H
WILLAS ELECTRONIC CO
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
