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8550XLT1 参数 Datasheet PDF下载

8550XLT1图片预览
型号: 8550XLT1
PDF下载: 下载PDF文件 查看货源
内容描述: 通用晶体管 [General Purpose Transistors]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 418 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
 浏览型号8550XLT1的Datasheet PDF文件第2页浏览型号8550XLT1的Datasheet PDF文件第3页  
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
FEATURE
High current capability, low forward voltage drop.
High surge capability.
We declare that the material of product compliance with RoHS requirements.
Guardring for overvoltage protection.
Pb-Free package is available
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
RoHS product for packing code suffix ”G”
Halogen free product
environmental standards of
Lead-free parts meet
for packing code suffix “H”
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
DEVICE MARKING AND ORDERING INFORMATION
Halogen free product for packing code suffix "H"
Shipping
Device
Mechanical data
Marking
General Purpose Transistors
Features
WILLAS
FM120-M
8550xLT1
THRU
FM1200-M
Pb Free Produc
Package outline
SOD-123H
PNP Silicon
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
8550PLT1
UL94-V0 rated flame retardant
85P
Epoxy :
8550QLT1
1YD
Case : Molded plastic, SOD-123H
3000/Tape&Reel
0.031(0.8) Typ.
SOT– 23
0.040(1.0)
0.024(0.6)
3000/Tape&Reel
,
Terminals
8550RLT1
:Plated terminals, solderable per MIL-STD-750
1YF
3000/Tape&Reel
Method 2026
0.031(0.8) Typ.
Polarity : Indicated by cathode band
Mounting Position
MAXIMUM RATINGS
: Any
Weight
Rating
: Approximated 0.011 gram
Collector-Emitter Voltage
Dimensions in inches and (millimeters)
Symbol
V
CEO
Value
25
Unit
V
1
BASE
COLLECTOR
3
MAXIMUM
CHARACTERISTICS
Collector-Base voltage
RATINGS AND ELECTRICAL
40
V
CBO
V
Emitter-base Voltage
V
EBO
V
Ratings at 25℃ ambient temperature unless otherwise specified.
5
Collector current-continuoun
I
800
mAdc
Single phase half wave, 60Hz, resistive of inductive load.
C
 
For capacitive load, derate current by 20%
THERMAL CHARACTERISTICS
Characteristic
RATINGS
Total Device Dissipation FR- 5 Board
(1)
Marking Code
T
A
= 25 °C
Maximum Recurrent Peak Reverse Voltage
2
Symbol
Max
Unit
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
EMITTER
P
D
Derate above 25 °C
Maximum RMS Voltage
Thermal Resistance, Junction to Ambient
Maximum DC Blocking Voltage
Total Device Dissipation
Maximum Average Forward Rectified Current
 
V
RRM
V
RMS
R
θJA
V
DC
P
D
I
O
 
I
FSM
R
θJA
12
20
225
14
1.8
20
13
30
556
300
2.4
417
21
mW /°C
28
°C/W
30
40
14
mW
40
15
50
35
50
16
60
42
60
1.0
 
30
40
120
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Alumina Substrate,
(2)
T
A
= 25 °C
Derate
Surge
25 °C
Peak Forward
above
Current 8.3 ms single half sine-wave
Thermal Resistance, Junction to Ambient
superimposed on rated load (JEDEC method)
Junction and Storage Temperature
Typical Thermal Resistance (Note 2)
mW
mW /°C
°C/W
°C
 
 
DEVICEMARKING
Typical Junction Capacitance (Note 1)
T
ΘJA
stg
R
J
, T
C
J
-55 to +150
 
 
 
Symbol
Min
Typ
0.70
 
-55 to +150
-55 to +125
T
J
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
Storage Temperature Range
TSTG
8550QLT1 = 1YD
Operating Temperature Range
8550PLT1 =85P
-
65
to +175
 
Characteristic
Maximum Forward Voltage at 1.0A DC
Collector-Emitter Breakdown Voltage
CHARACTERISTICS
OFFCHARACTERISTICS
Max
0.85
Unit
0.9
0.92
 
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
I
R
Maximum
=
Average Reverse Current at @T A=25℃
(I
C
1.0mA)
0.50
V
(BR)CEO
25
5
40
0.5
10
150
150
V
V
V
nA
nA
@T
Rated
Emitter-Base
Voltage
DC Blocking
Breakdown Voltage
A=125℃
 
(I
E
= 100µA)
NOTES:
Collector-Base Breakdown voltage
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
(I
C
= 100µA)
2- Thermal Resistance From Junction to Ambient
V
(BR)EBO
V
(BR)CBO
I
CBO
 
 
Collector Cutoff Current
(V
CB
= 35 V)
Emitter Cutoff Current
(V
EB
=4V)
1. FR-5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
I
EBO
2012-
2012-06
WILLAS
WILLAS ELECTRONIC COR
ELECTRONIC CORP.