WILLAS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
General Purpose Transistors
Features
FM120-M
9013xLT1
THRU
FM1200-M
Pb Free Product
NPN Silicon
Package outline
SOD-123H
•
Batch process design, excellent power dissipation offers
FEATURE
better reverse leakage current and thermal resistance.
We declare that the material of product compliance with RoHS requirements.
Low profile surface mounted application in order to
•
package is available
Pb-Free
optimize board space.
RoHS product
power loss,
code
efficiency.
•
Low
for packing
high
suffix ”G”
Halogen
•
free product for packing code suffix “H”
High current capability, low forward voltage drop.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
•
High surge capability.
DEVICE
•
MARKING AND ORDERING INFORMATION
Guardring for overvoltage protection.
•
Device
Ultra high-speed switching.
Marking
Shipping
•
Silicon epitaxial planar chip, metal silicon junction.
9013PLT1
13P
standards of
•
Lead-free parts meet environmental
3000/Tape&Reel
MIL-STD-19500 /228
9013Q LT1
13Q
3000/Tape&Reel
•
RoHS product for packing code suffix "G"
9013RLT1
3000/Tape&Reel
Halogen free product
13R
for packing code suffix "H"
SOT-23
0.071(1.8)
0.056(1.4)
ry
0.031(0.8) Typ.
9013S
Mechanical
LT1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
THERMAL CHARATEERISTICS
Pr
eli
RATINGS
Ratings at 25℃
Characteristic
ambient temperature unless otherwise specified.
Symbol
Single phase half wave, 60Hz, resistive
Total Device Dissipation FR-5 Board, (1)
of inductive load.
P
D
For
o
capacitive load, derate current by 20%
T
A
=25 C
Derate above 25
C
Marking Code
o
mi
500
mAdc
Max
Unit
225
1.8
mW
R
θ
V
RRM
JA
P
D
V
RMS
V
DC
I
O
12
20
14
13
556
30
21
Method 2026
Collector-Emitter Voltage
V
CEO
•
Polarity : Indicated by cathode band
Collector-Base Voltage
V
CBO
•
Mounting Position : Any
Emitter-Base Voltage
V
EBO
•
Weight : Approximated 0.011 gram
Collector current-continuoun
I
C
20
40
5
na
V
V
V
mW/ C
o
•
•
Case : Molded
MAXIMUM RATINGS
plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Symbol
Value
Unit
Rating
3000/Tape&Reel
Epoxy : UL94-V0 rated flame retardant
data
13S
0.040(1.0)
0.024(0.6)
3
COLLECTOR
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
2
EMITTER
1
BASE
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
o
Thermal Resistance,
Peak Reverse Voltage
Maximum Recurrent
Junction to Ambient
Total Device Dissipation
Maximum RMS Voltage
Maximum DC Blocking Voltage
Alumina Substrate, (2) T
A
=25
o
C
C
/
W
40
28
40
mW
14
15
50
35
50
16
60
60
18
80
56
10
100
70
115
150
105
150
120
200
140
Vo
42
1.0
30
40
120
Vo
20
300
30
80
100
200
Vo
Maximum Average
Derate above 25
o
C
Forward Rectified Current
2.4
mW/
o
C
o
Am
Thermal Resistance,
Current 8.3 ms
Ambient
sine-wave
Junction to
single half
Peak Forward Surge
Junction and Storage Temperature
superimposed on rated load (JEDEC method)
Tj ,Tstg
R
ΘJA
R
θJA
I
FSM
417
-55 to +150
C
/
W
o
C
Am
DEVICE MARKING
(Note 2)
Typical Thermal Resistance
Typical Junction Capacitance (Note 1)
9013QLT1=13Q
9013RLT1=13R
Operating Temperature Range
C
J
9013SLT1=13S
T
J
o
-55 to +125
-55 to +150
℃/
PF
-
65
to +175
℃
Storage Temperature Range
TSTG
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
℃
OFF CHARACTERISTICS
CHARACTERISTICS
Characteristic
Symbol
V
F
Min
0.50
Typ
0.70
Max
-
-
-
150
150
0.85
Unit
V
V
V
nA
nA
0.9
0.92
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
Collector-Emitter Breakdown Voltage
Maximum Average Reverse Current at @T A=25℃
I
R
(I
C
=1.0mA)
@T A=125℃
Rated DC Blocking Voltage
Emitter-Base Breakdown Voltage
(I
E
NOTES:
=100µA)
Collector-Base
1 MHZ and applied reverse voltage of 4.0 VDC.
1- Measured at
Breakdown Voltage
(I
C
2- Thermal Resistance From Junction to Ambient
=100µA)
Collector Cutoff Current (V
CB
=35V)
Emitter Cutoff Current (V
EB
=4V)
Maximum Forward Voltage at 1.0A DC
V
(BR)CEO
V
(BR)EBO
V
(BR)CBO
I
CBO
I
EBO
20
5
40
-
-
Vo
0.5
10
mA
-
-
-
2012-
WILLAS ELECTRONIC CORP.