1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
General Purpose Transistors
Features
WILLAS
FM120-M
9014xLT1
THRU
FM1200-M
Pb Free Produc
Package outline
SOD-123H
NPN
profile surface mounted application in order to
•
Low
Silicon
better reverse leakage current and thermal resistance.
optimize board space.
•
Low power loss, high efficiency.
FEATURE
capability, low forward voltage drop.
•
High current
High surge capability.
•
Complementary to 9015.
•
Guardring for overvoltage protection.
Ultra high-speed switching.
•
We declare that the material of product compliance with RoHS requirements.
Pb-Free package is available
silicon junction.
•
Silicon epitaxial planar chip, metal
Lead-free parts meet environmental standards of
•
RoHS product for packing code suffix ”G”
MIL-STD-19500 /228
Halogen free product for packing code suffix “H”
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
SOT– 23
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
DEVICE MARKING AND ORDERING INFORMATION
•
Case : Molded plastic, SOD-123H
Device
Marking
Shipping
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
•
•
•
14Q
Polarity : Indicated by cathode band
9014RLT1
14R
Mounting Position : Any
9014SLT1
14S
Weight : Approximated 0.011 gram
9014TLT1
14T
9014QLT1
Method 2026
3000/Tape&Reel
Dimensions in inches and (millimeters)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
COLLECTOR
3
0.031(0.8) Typ.
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
1
BASE
2
EMITTER
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single
MAXIMUM RATINGS
of inductive load.
phase half wave, 60Hz, resistive
For capacitive load, derate current by 20%
RATINGS
Rating
Marking Code
Maximum Recurrent Peak Reverse Voltage
SYMBOL
Value
H FM130-MH
FM140-MH FM150-MH FM160-MH
FM120-M
Symbol
Unit
FM180-MH FM1100-MH FM1150-MH FM1200-MH
Collector-Emitter Voltage
V
CEO
V
RRM
45
12
20
13
V
30
21
V
30
V
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
40
120
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Collector-Base
Maximum RMS Voltage
Voltage
Maximum DC Blocking Voltage
Emitter-Base Voltage
Maximum Average Forward Rectified Current
V
CBO
V
RMS
V
EBO
V
DC
I
C
I
O
I
FSM
R
ΘJA
C
J
TSTG
50
14
5
20
100
Collector current-continuoun
mA
Peak Forward Surge Current 8.3 ms single half sine-wave
THERMAL CHARATEERISTICS
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Characteristic
Operating Temperature Range
Storage Temperature Range
Symbol
P
D
-55 to +125
Max
225
Unit
-55 to +150
Total Device Dissipation FR-5 Board, (1)
T
J
T
A
=25 C
o
-
65
to +175
mW
mW/ C
o
Maximum Forward Voltage at 1.0A DC
Derate above 25
C
CHARACTERISTICS
o
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
o
V
F
@T A=125℃
1.8
0.50
0.70
0.5
10
0.85
0.9
0.92
Thermal Resistance, Junction
A=25℃
Maximum Average Reverse Current at @T
to Ambient
Rated DC Blocking Voltage
Total Device Dissipation
I
R
R
JA
556
C
/
W
P
D
300
2.4
R
JA
NOTES:
Alumina
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Substrate, (2) TA=25
o
C
mW
mW/
o
C
o
2- Thermal Resistance From Junction to Ambient
Derate above 25
o
C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
417
-55 to +150
C
/
W
o
T
J
,T
stg
C
2012-
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
WILLAS [ WILLAS ELECTRONIC CORP ]
