SOT-23
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Plastic-Encapsulate Transistors
1.0A
SOD-123
TRANSISTOR
•
Batch process design, excellent power dissipation offers
(
PNP
)
better reverse leakage current and thermal resistance.
FEATURES
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low
High voltage and high current
forward voltage drop.
•
High surge capability.
Excellent
Guardring for overvoltage protection.
•
h
FE
Linearity
•
Low niose
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
Pb-Free
•
Lead-free parts meet environmental standards of
package is available
MIL-STD-19500 /228
RoHS product for packing code suffix ”G”
•
RoHS product for packing code suffix "G"
Halogen free product for packing code
suffix "H"
“H”
Halogen free product for packing code
suffix
WILLAS
FM120-M
A1015
THRU
FM1200-M
PACKAGE
Pb Free Produ
Features
Package outline
SOT-23
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
1. BASE
2. EMITTER
3. COLLECTOR
0.071(1.8)
0.056(1.4)
Mechanical data
Method 2026
ina
V
RRM
V
DC
12
20
13
30
30
14
40
40
15
50
35
50
20
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
Collector-Base Voltage
•
Weight : Approximated 0.011 gram
Collector-Emitter Voltage
ry
-50
-50
-5
150
200
16
-55-125
60
42
•
Epoxy : UL94-V0 rated flame retardant
MARKING: BA
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals,
otherwise
MIL-STD-750
MAXIMUM RATINGS (T
a
=25℃ unless
solderable per
noted)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Value
Unit
Dimensions in inches and (millimeters)
V
V
V
mA
mW
18
80
56
80
10
℃
100
70
100
115
150
105
150
120
200
140
200
MAXIMUM
Voltage
Emitter-Base
RATINGS AND ELECTRICAL CHARACTERISTICS
Junction Temperature
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum DC Blocking Voltage
14
21
28
ELECTRICAL
RMS Voltage
Maximum
CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
V
RMS
Pr
el
Symbol
I
O
Storage Temperature
im
Ratings at 25℃
Collector
temperature unless otherwise specified.
ambient
Current -Continuous
Single phase half wave, 60Hz, resistive of inductive load.
Collector
current by 20%
For capacitive load, derate
Power Dissipation
125
℃
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-
Parameter
Maximum Average Forward Rectified Current
superimposed on rated load (JEDEC method)
Collector-emitter breakdown voltage
Test conditions
Min
-50
-50
-5
60
V
(BR)CBO
Collector-base breakdown
8.3 ms single half sine-wave
Peak Forward Surge Current
voltage
Emitter-base breakdown voltage
1)
Typical Junction Capacitance (Note
Operating Temperature
Collector cut-off current
Range
Typical Thermal Resistance (Note 2)
V
(BR)CEO
I
FSM
I
C
= = 0
-100u A,I
E
I
C
= 0
= -0.1mA, I
B
Typ
1.0
30
40
120
Max
Unit
V
V
(BR)EBO
J
C
T
I
CBO
J
R
ΘJA
I
E
= = 0
-100 u A, I
C
= 0
V
CB
= -50V ,I
E
-55 to +125
V
V
-0.1
uA
uA
uA
0.9
0.92
-55 to +150
-
65
to +175
Collector cut-off current
Emitter cut-off current
Storage Temperature Range
I
CEO
TSTG
V= 0
CE
= -50V , I
B
0.50
0.70
-0.1
0.85
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
@T A=125℃
SYMBOL
= 0
V
EB
= - 5V, I
C
I
EBO
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-M
DC current gain
Maximum Average Reverse Current at @T A=25℃
Collector-emitter saturation voltage
NOTES:
Base-emitter saturation voltage
h
FE
V
F
I
R
-0.1
V
CE
= -6V,I
C
= -2mA
I
C
=-100 mA, I
B
= -10mA
I
C
=-100 mA, I
B
= -10mA
V
CE
= -10V,I
C
= -1mA
f=30MHz
130
0.5
10
400
V
V
MHz
V
CE(sat)
V
BE(sat)
f
T
-0.3
-1.1
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Transition frequency
80
CLASSIFICATION OF h
FE
Rank
Range
L
H
200-400
130-200
2012-06
WILLAS ELECTRONIC COR
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
