SOT-89 Plastic-Encapsulate Transistors
Features
WILLAS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
B772
THRU
FM1200-M
FM120-M
Pb Free Produ
Package outline
SOD-123H
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
TRANSISTOR（PNP）
high efficiency.
•
Low power loss,
•
High current capability, low forward voltage drop.
FEATURES
•
High surge capability.
Low speed switching
for overvoltage protection.
•
Guardring
•
Ultra high-speed switching.
Pb-Free package
epitaxial planar chip, metal silicon junction.
•
Silicon
is available
•
Lead-free parts meet environmental standards of
RoHS product for packing code suffix ”G”
MIL-STD-19500 /228
Halogen free product for
packing code suffix
suffix “H”
•
RoHS product for
packing code
"G"
Halogen free product for packing code suffix "H"
SOT-89
1.
BASE
2.
COLLETOR
3.
EMITTER
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
1 2 3
0.071(1.8)
0.056(1.4)
Mechanical data
MAXIMUM RATINGS (T
a
=25℃
flame retardant
•
Epoxy : UL94-V0 rated
unless otherwise noted)
•
Case : Molded plastic, SOD-123H
Symbol
Parameter
Value
Unit
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
V
CBO
V
CEO
V
EBO
I
C
P
C
Collector-Base Voltage
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
-40
T
j
T
stg
Single phase half wave, 60Hz, resistive of inductive load.
150
Junction Temperature
For capacitive load, derate current by 20%
Storage Temperature
RATINGS
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
20
30
40
Maximum Recurrent Peak Reverse Voltage
V
RRM
Maximum RMS Voltage
Maximum DC Blocking Voltage
Pr
el
Marking Code
im
℃
-55~150
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Thermal Resistance, junction
unless otherwise specified.
℃
/W
250
R
ӨJA
Ratings at 25℃ ambient temperature
to Ambient
Collector Power Dissipation
ina
-5
V
-3
A
0.5
W
Collector-Emitter
by cathode band
•
Polarity : Indicated
Voltage
Emitter-Base Voltage
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Collector Current -Continuous
-30
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-
12
14
ry
V
V
Dimensions in inches and (millimeters)
℃
13
21
14
15
50
16
60
42
60
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Parameter
Symbol
V
RMS
V
DC
Test conditions
20
30
28
40
Min
50
35
Typ
1.0
30
40
120
Max
Unit
V
V
V
Collector-base breakdown
Rectified Current
V
(BR)CBO
I
O
Maximum Average Forward
voltage
V
(BR)CEO
Collector-emitter breakdown voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
I
C
=-100μA ,I
E
=0
I
C
= -10mA , I
B
=0
-40
-30
-5
Emitter-base breakdown
(JEDEC method)
superimposed on rated load
voltage
Typical Thermal Resistance
Collector cut-off current
(Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
I
FSM
I
E
= -100μA,I
C
=0
Collector cut-off current
R
ΘJA
V
CB
= -40V, I
E
=0
C
J
V
CE
=-30V, I
B
=0
+125
-55 to
T
J
TSTG
-1
60
-10
to +150
μA
-55
μA
400
μA
Emitter cut-off current
Storage Temperature Range
V
EB
=-6V, I
C
=0
V
CE
= -2V, I
C
= -1A
-
65
to +175
-1
DC current gain
Collector-emitter saturation
1.0A DC
voltage
Maximum Forward Voltage at
Rated DC Blocking Voltage
Transition frequency
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-M
V
F
I
R
I
C
=-2A, I
B
= -0.2A
0.50
0.70
0.5
10
-0.5
-1.5
0.85
V
V
0.9
0.92
Maximum Average Reverse Current
V
BE(sat)
Base-emitter saturation voltage
at @T A=25℃
@T A=125℃
I
C
=-2A, I
B
= -0.2A
V
CE
= -5V, I
C
=-0.1A
f =10MHz
NOTES:
f
T
80
MHz
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
CLASSIFICATION OF h
FE
Rank
Range
R
2- Thermal Resistance From Junction to Ambient
O
100-200
Y
160-320
GR
200-400
60-120
2012-06
WILLAS ELECTRONIC COR
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
