SOT-23 Plastic-Encapsulate Diodes
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
2.0 k
820
Ω
•
Low profile surface mounted application in order to
+10 V
optimize board space.
0.1µF
•
Low power loss, high efficiency.
I
F
100
µH
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
0.1
µF
D.U.T.
•
Ultra high-speed switching.
50 OUTPUT
junction.
•
Silicon
Ω
epitaxial planar chip, metal silicon
50
Ω
INPUT
PULSE
SAMPLING
•
Lead-free parts meet environmental standards of
GENERATOR
OSCILLOSCOPE
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
WILLAS
FM120-M
BAS16LT1
THRU
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
SOD-123H
t
r
t
p
10%
90%
t
I
F
0.146(3.7)
0.130(3.3)
t
rr
0.012(0.3) Typ.
t
V
R
INPUT SIGNAL
I
R
0.071(1.8)
= 1.0 mA
0.056(1.4)
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
i
R(REC)
Mechanical data
1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I
Notes:
Notes:
2. Input pulse
•
Epoxy : UL94-V0 rated flame retardant
is adjusted so I
R(peak)
is equal to 10 mA.
Notes:
3. t
p
»
•
Case : Molded plastic, SOD-123H
t
rr
0.031(0.8) Typ.
,
Figure 1. Recovery Time Equivalent Test Circuit
•
Terminals :Plated terminals, solderable per MIL-STD-750
F
) of 10 mA.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
I
F
, FORWARD CURRENT (mA)
I
R
, REVERSE CURRENT (µA)
•
Polarity : Indicated by cathode band
100
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
T = 85°C
A
10
Dimensions in inches and (millimeters)
T
A
= 150°C
T
A
= 125°C
1.0
T
A
= – 40°C
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
1.0
T
A
= 25°C
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
0.2
0.1
10
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
0.1
T
A
= 85°C
T
A
= 55°C
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
0.01
V
RRM
0.8
12
20
14
20
1.2
13
30
30
0
14
40
40
15
50
10
Maximum DC Blocking Voltage
0.4
0.6
V
RMS
V
DC
1.0
21
0.001
28
16
T
60
= 25°C
42
60
20
A
18
80
56
80
30
10
100
70
100
40
115
150
105
150
50
120
200
140
200
Vo
35
Vo
50
Vo
V , FORWARD VOLTAGE (VOLTS)
Maximum Average Forward
F
Rectified Current
I
O
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Figure 2. Forward Voltage
I
FSM
V
R
, REVERSE VOLTAGE (VOLTS)
1.0
Figure 3.
Leakage Current
30
Am
Am
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
0.68
R
ΘJA
C
J
T
J
TSTG
-55 to +125
40
120
-55 to +150
℃
P
C
D
, DIODE CAPACITANCE (pF)
-
65
to +175
℃
0.64
℃
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
0.60
V
F
I
R
0.50
0.70
0.5
10
0.85
0.9
0.92
Vo
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
0.56
mA
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.52
0
2
4
6
8
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
2012-06
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
