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BAS16W 参数 Datasheet PDF下载

BAS16W图片预览
型号: BAS16W
PDF下载: 下载PDF文件 查看货源
内容描述: SOT- 323塑封装二极管 [SOT-323 Plastic-Encapsulate Diodes]
分类和应用: 二极管
文件页数/大小: 2 页 / 351 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
 浏览型号BAS16W的Datasheet PDF文件第2页  
SOT-323 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
SWITCHING DIODE
Features
FEATURES
process design, excellent power dissipation offers
Batch
better reverse leakage current and thermal resistance.
Fast Switching Speed
Low profile surface mounted application in order to
optimize board space.
For General Purpose Switching Applications
Low power loss, high efficiency.
High Conductance
High current capability, low forward voltage drop.
Pb-Free package is
High surge capability.
available
Guardring for overvoltage protection.
”G”
RoHS product for packing code suffix
Ultra high-speed switching.
Halogen free product for packing code suffix “H”
Silicon epitaxial planar chip, metal silicon junction.
Moisture
parts meet
Level 1
Lead-free
Sensitivity
environmental standards of
MIL-STD-19500 /228
WILLAS
FM120-M
BAS16W
THRU
FM1200-M
Pb Free Product
Package outline
SOT-323
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
1
2
0.071(1.8)
0.056(1.4)
3
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
ry
Limit
100
Unit
V
V
V
mA
53
300
40
2.0
40
28
1.0
13
30
21
30
Epoxy : UL94-V0 rated flame retardant
Marking: A2
Molded plastic, SOD-123H
Case :
0.031(0.8) Typ.
,
Terminals :Plated terminals, solderable per MIL-STD-750
Maximum Ratings and
2026
Method
Electrical Characteristics, Single Diode @Ta=25℃
Polarity : Indicated by cathode band
Parameter
Mounting Position : Any
Non-Repetitive Peak
Reverse Voltage
Weight : Approximated 0.011 gram
Symbol
V
RM
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
 
Forward Continuous Current
RATINGS
RMS Reverse Voltage
Single phase half wave, 60Hz, resistive of inductive load.
V
R(RMS)
For capacitive load, derate current by 20%
Pr
el
I
O
12
20
14
im
I
FM
V
RRM
V
RMS
V
DC
I
O
V
RRM
Peak Repetitive Peak
Reverse Voltage
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
75
Working Peak Reverse Voltage
V
RWM
Ratings at 25℃ ambient
DC Blocking Voltage
temperature unless otherwise specified.
V
R
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
ina
150
14
I
FSM
P
D
15
50
35
50
20
Dimensions in inches and (millimeters)
Average Rectified Output Current
Marking Code
Maximum RMS Voltage
Maximum Recurrent Peak Reverse Voltage
Peak
Forward Surge Current
@t=1.0μs
Maximum DC Blocking Voltage
16
60
42
60
1.0
 
30
40
120
18
80
56
80
mA
10
A
100
70
100
115
150
105
150
120
200
140
200
Vo
@t =1.0s
Vo
Power Dissipation
 
Thermal Resistance Junction to Ambient
Storage
Temperature
superimposed on rated load (JEDEC method)
Maximum Average Forward Rectified Current
200
625
150
mW
Vo
Peak Forward Surge Current 8.3
Junction
Temperature
ms single half sine-wave
R
θJA
 
I
FSM
T
j
C
J
T
J
℃/W
Am
 
Am
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
R
ΘJA
T
STG
 
-55~+150
 
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
-55 to +125
TSTG
 
 
-55 to +150
℃/
P
 
-
65
to +175
 
Parameter
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Reverse breakdown voltage
Maximum Average Reverse Current at @T A=25℃
@T
Rated DC Blocking Voltage
Reverse voltage leakage current
A=125℃
NOTES:
Symbol
V
(BR)
V
F
I
R
Test
conditions
0.70
Min
75
0.5
10
Max
0.85
Unit
0.9
V
0.92
 
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
I
R
= 10µA
0.50
V
R
=75V
V
R
=20V
I
F
=1mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=0, f=1MHz
I
F
=I
R
=10mA,I
rr
=0.1×I
R,
R
L
=100Ω
Vo
 
I
R
1
25
0.715
0.855
1
1.25
2
4
µA
nA
mA
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
 
 
2-
Forward voltage
Thermal Resistance From Junction to Ambient
V
F
V
Diode capacitance
Reveres recovery time
C
D
t
rr
pF
ns
2012-06
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.