SOT-323 Plastic-Encapsulate Diodes
Features
WILLAS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
BAS19W
FM120-M
BAS20W
THRU
BAS21W
FM1200-M
Pb Free Product
Package outline
SOT-323
SOD-123H
0.146(3.7)
0.130(3.3)
•
Batch
DIODE
SWITCHING
process design, excellent power dissipation offers
better
FEATURES
reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
Fast
optimize board space.
Switching Speed
•
Low power loss, high efficiency.
Surface Mount Package Ideally Suited for Automatic Insertion
•
High current capability, low forward voltage drop.
For
•
General Purpose Switching Applications
High surge capability.
•
Conductance
High
Guardring for overvoltage protection.
•
Ultra high-speed
available
Pb-Free package is
switching.
•
Silicon epitaxial planar
code suffix ”G”
RoHS product for packing
chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
Halogen free product for packing code suffix “H”
MIL-STD-19500 /228
•
RoHS product for packing code
Moisture Sensitivity Level 1
suffix "G"
Halogen free product for packing code suffix "H"
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
1
3
2
0.040(1.0)
0.024(0.6)
Mechanical data
Marking:
Epoxy : UL94-V0
KA8
flame retardant
rated
•
BAS19W
BAS21W
KT3
•
Case : Molded plastic, SOD-123H
BAS20W
KT2
,
•
Terminals :Plated terminals,
Maximum Ratings @Ta=25℃
solderable per MIL-STD-750
Method 2026
0.031(0.8) Typ.
0.031(0.8) Typ.
•
Polarity :
Parameter
cathode band
Indicated by
•
Mounting Position : Any
Peak Repetitive
Approximated 0.011 gram
•
Weight :
Reverse Voltage
DC Blocking Voltage
Average Rectified Output Current
Symbol
V
RRM
V
R
I
O
BAS19W
100
BAS20W
150
200
200
625
Dimensions in inches and (millimeters)
BAS21W
250
Unit
V
mA
mW
℃/W
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Pd
Power Dissipation
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current
to Ambient
R
θ
JA
Thermal Resistance. Junction
by 20%
RATINGS
Junction Temperature
Storage Temperature Range
Maximum RMS Voltage
Maximum DC Blocking Voltage
Marking Code
SYMBOL
T
J
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
℃
150
Maximum Recurrent Peak Reverse Voltage
V
RRM
V
RMS
V
DC
I
O
T
STG
12
20
14
13
30
21
14
40
28
40
-55~+150
35
50
15
50
16
60
18
80
56
10
100
70
115
℃
150
105
150
120
200
140
Vo
42
60
1.0
Min
30
Vo
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Maximum Average Forward Rectified Current
20
30
80
100
200
Vo
Am
Peak Forward Surge Current 8.3 ms single half sine-wave
Parameter
superimposed on rated load (JEDEC method)
I
FSM
Symbol
Test
conditions
Max
Unit
Am
Reverse breakdown
(Note 2)
Typical Thermal Resistance
voltage
Operating Temperature Range
Storage Temperature Range
BAS19W
ΘJA
R
C
BAS20W
J
V
(BR)
-55 to +125
Typical Junction Capacitance (Note 1)
BAS21W
BAS19W
T
J
I
R
=
100µA
100
40
120
150
250
-55 to +150
℃/
V
P
℃
TSTG
-
65
to +175
℃
Reverse voltage leakage current
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
CHARACTERISTICS
BAS20W
F
V
I
R
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
V
R
=100V
V
R
=200V
I
R
V
R
=150V
0.50
0.70
0.5
10
0.1
0.85
µA
0.9
0.92
Vo
Maximum Average Reverse Current at @T A=25℃
BAS21W
@T A=125℃
mA
Forward
NOTES:
voltage
V
F
C
D
t
rr
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
I
F
=100mA
I
F
=200mA
V
R
=0V, f=1MHz
I
F
=I
R
=30mA,I
rr
=0.1×I
R
1
1.25
5
50
V
pF
ns
Reveres recovery time
2- Thermal Resistance From Junction to Ambient
Diode capacitance
2012-06
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
