SOT-23 Plastic-Encapsulate Diodes
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
SWITCHING DIODE
leakage current and thermal resistance.
better reverse
•
Low
FEATURES
profile surface mounted application in order to
optimize board space.
Fast Switching Speed
•
Low power loss, high efficiency.
•
High current capability, low
Ideally Suited for
Surface Mount Package
forward voltage drop.
Automatic Insertion
•
High surge capability.
For General Purpose Switching Applications
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
High Conductance
•
Silicon
package is available
Pb-Free
epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
RoHS product for packing code suffix ”G”
MIL-STD-19500 /228
•
RoHS product for packing code suffix
code
Halogen free product for packing
"G"
suffix “H”
Halogen
Sensitivity
packing
Moisture
free product for
Level 1
code suffix "H"
WILLAS
BAS19
THRU
BAS20
FM1200-M
Pb Free Product
FM120-M
Features
Package outline
SOT-23
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
1
3
2
0.071(1.8)
0.056(1.4)
Mechanical data
Method 2026
ina
Symbol
V
RM
V
R
I
BAS19
100
200
200
625
14
40
28
40
•
Polarity : Indicated by cathode band
Parameter
•
Mounting Position : Any
Non-Repetitive Peak Reverse Voltage
•
Weight : Approximated 0.011 gram
DC Blocking Voltage
Average Rectified Output Current
ry
BAS20
150
13
30
21
30
15
16
-55~+150
60
50
35
50
42
60
Marking:
Epoxy : UL94-V0 rated flame retardant
JP
•
BAS19
plastic, SOD-123H
•
Case : Molded
JR
or A80
BAS20
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Maximum Ratings @Ta=25℃
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
Unit
V
mA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
im
R
θ
JA
T
J
12
T
STG
20
14
20
O
Ratings at 25℃ ambient temperature unless otherwise specified.
Pd
Single phase half wave, 60Hz, resistive of inductive load.
Power Dissipation
For capacitive load, derate current by 20%
mW
℃/W
10
℃
100
70
100
Thermal Resistance. Junction to Ambient
JunctionTemperature
Marking Code
Maximum RMS Voltage
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
Storage Temperature Range
Voltage
Maximum Recurrent Peak Reverse
Maximum DC Blocking Voltage
Pr
el
150
V
RRM
V
RMS
V
DC
18
80
56
80
1.0
30
Min
40
100
120
℃
115
150
105
150
120
200
140
200
V
Vo
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Maximum Average Forward Rectified Current
I
O
Vo
A
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Parameter
I
FSM
Max
Unit
V
Symbol
V
(BR) R
Test
conditions
A
Typical Thermal Resistance (Note 2)
Reverse breakdown voltage
Operating Temperature Range
Storage Temperature Range
Typical Junction Capacitance (Note 1)
R
ΘJA
BAS19
I
R
= 100µA
-55 to +125
BAS20
BAS19
TSTG
BAS20
V
F
@T A=125℃
C
J
T
J
150
-55 to +150
℃
P
Reverse voltage leakage current
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Forward voltage
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
Junction capacitance
I
R
V
R
=100V
V
R
=150V
I
F
=100mA
0.50
I
F
=200mA
0.70
-
65
to +175
0.1
0.85
µA
0.9
V
0.92
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
V
F
C
J
t
rr
I
R
0.5
10
1
1.25
5
50
V
V
R
=0V, f=1MHz
I
F
=I
R
=30mA,I
rr
=0.1×I
R
pF
ns
m
NOTES:
Reveres
at 1 MHZ and applied reverse voltage of 4.0 VDC.
1- Measured
recovery time
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
