200mA
Surface Mount
Switching Diode-250V
1.0A SURFACE MOUNT SCHOTTKY BARRIER
Package
SOD-323
RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
HIGH VOLTAGE
•
High current capability, low forward voltage drop.
•
High surge capability.
DIODE
SWITCHING
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
1
2
•
Silicon epitaxial planar chip, metal silicon junction.
CATHODE
ANODE
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
WILLAS
FM120-M
THRU
PACKAGE
BAS21H
FM1200-M
Pb Free Produc
Features
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
ORDERING
•
Epoxy : UL94-V0 rated flame retardant
INFORMATION
•
Case : Molded plastic, SOD-123H
Device
Marking
Shipping
,
BAS21H
JS
3000/Tape
•
Terminals :Plated terminals, solderable per MIL-STD-750
& Reel
Method 2026
Pb-Free package is available
•
Polarity : Indicated
for
cathode band
suffix ”G”
RoHS product
by
packing code
Halogen free
: Any
•
Mounting Position
product for packing code suffix “H”
0.031(0.8) Typ.
SOD– 323
0.040(1.0)
0.024(0.6)
MARKING DIAGRAM
0.031(0.8) Typ.
JS
Dimensions in inches and (millimeters)
Moisture Sensitivity Level 1
•
Weight : Approximated 0.011 gram
JS = Device Code
Polarity:
Color band denotes cathode end
MAXIMUM RATINGS
RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM
Ratings at 25℃
Rating
temperature unless otherwise specified.
ambient
Symbol
Value
Unit
Single phase half wave, 60Hz, resistive of inductive load.
Continuous Reverse Voltage
V
R
250
Vdc
For capacitive load, derate current by 20%
Peak Forward Current
I
F
200
mAdc
Peak Forward Surge Current
I
FM120-M
625
mAdc
SYMBOL
FM(surge)
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
Marking Code
Maximum RMS Voltage
Maximum Recurrent Peak Reverse Voltage
THERMAL CHARACTERISTICS
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
12
20
14
Symbol
P
D
20
13
30
21
14
40
15
50
35
Unit
50
mW
16
60
42
60
1.0
30
40
120
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Maximum DC Blocking Voltage
Total Device Dissipation FR–5 Board,*
Maximum Average
25°C
T
A
=
Forward Rectified Current
Characteristic
30
200
40
Max
28
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Derate above 25°C
1.57
R
θJA
T
J
, T
stg
635
–55 to+150
mW/°C
°C/W
°C
Typical Thermal Resistance (Note 2)
Thermal Resistance Junction to Ambient
Junction and Storage
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Temperature Range
-55 to +125
T
J
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Storage Temperature Range
TSTG
*FR–5 Minimum Pad
-55 to +150
Min
-
65
to +175
Max
Unit
0.70
Characteristic
Symbol
I
R
OFF CHARACTERISTICS
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Current
Reverse Voltage Leakage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
I
R
0.50
0.85
µAdc
0.9
0.92
(V
R
= 200 Vdc)
Maximum Average Reverse Current at @T A=25℃
(V
R
=
Voltage
@T
Rated DC Blocking
200 Vdc, T
J
= 150°C)
A=125℃
–
–
V
(BR)
V
F
–
–
C
D
t
rr
–
–
250
0
0.5
100
10
–
1000
1250
5.0
50
pF
ns
Vdc
mV
NOTES:
Reverse Breakdown Voltage
(I
BR
= 100
µAdc)
Forward Voltage
(I
F
= 100 mAdc)
(I
F
= 200 mAdc)
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
Reverse Recovery Time
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
(I
F
= I
R
= 30 mAdc, R
L
= 100
Ω)
2012-06
WILLAS ELECTRONIC COR
2012-1
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
