SOT-523 Plastic-Encapsulate
RECTIFIERS -20V- 200V
Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER
SOD-123
•
Batch process design, excellent power dissipation offers
FEATURES
better reverse leakage current and thermal resistance.
Low profile surface
•
Switching Speed
mounted application in order to
Fast
WILLAS
FM120-M
BAS21T
THRU
FM1200-M
Pb Free Product
PACKAGE
SOT-523
Features
SWITCHING DIODE
Package outline
SOD-123H
For General Purpose Switching Applications
•
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High
•
Conductance
•
High surge capability.
Pb-Free package
overvoltage protection.
is available
•
Guardring for
RoHS
Ultra high-speed switching.
suffix ”G”
•
product for packing code
•
Silicon epitaxial planar chip, metal silicon junction.
Halogen free product for packing code suffix “H”
•
Lead-free parts meet environmental standards of
Moisture Sensitivity Level 1
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
•
Halogen free product for packing code suffix "H"
optimize board space.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
1
3
2
0.071(1.8)
0.056(1.4)
Mechanical data
•
Epoxy
MARKING :T3
: UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
Maximum Ratings @Ta=25℃
•
Polarity : Indicated by cathode band
Parameter
•
Mounting Position : Any
Peak Repetitive
:
Peak Reverse
0.011 gram
•
Weight Approximated
Voltage
0.040(1.0)
0.024(0.6)
ina
Symbol
I
FM
I
O
14
40
28
12
t = 1.0s
13
@
20
30
14
21
30
20
ry
Limit
250
400
200
15
50
35
16
0.5
60
42
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
Unit
V
mA
mA
18
80
56
80
10
100
70
V
RRM
Working Peak Reverse Voltage
V
RWM
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
DC Blocking Voltage
V
R
Single phase half wave, 60Hz, resistive of inductive load.
Average Rectified Output Current
20%
For capacitive load, derate current by
Marking Code
Non-Repetitive Peak Forward Surge Current
SYMBOL
RATINGS
Power Dissipation
Maximum Recurrent Peak Reverse Voltage
im
Ratings
Continuous Current
Forward
at 25℃ ambient temperature unless otherwise specified.
2.5
@ t
H
1.0µs
FM120-M
=
FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
I
FSM
P
D
A
150
115
150
105
150
120
200
140
200
Pr
el
V
RRM
V
RMS
V
DC
I
O
I
FSM
Maximum RMS Voltage
mW
V
V
Maximum DC Blocking Voltage
Thermal Resistance Junction to Ambient
40
R
θJA
50
60
833
1.0
150
30
-55~+150
40
120
100
℃/W
V
Operating Junction Temperature
Storage Temperature
Maximum Average Forward Rectified Current
T
J
T
STG
℃
℃
A
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
A
Typical Thermal Resistance (Note 2)
R
ΘJA
ELECTRICAL
Capacitance (Note 1)
CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Typical Junction
C
J
Operating Temperature Range
-55 to +150
℃
Parameter
Storage Temperature Range
T
J
-55 to +125
-
65
to +175
Min
Symbol
TSTG
Test
conditions
Max
Unit
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
CHARACTERISTICS
Reverse breakdown voltage
SYMBOL
FM120-MH
= 100μA
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
I
R
FM130-MH
250
V
V
(BR)
V
F
I
R
I
R
0.50
0.70
0.5
10
0.85
0.9
0.92
V
Maximum Average Reverse Current at @T A=25℃
Reverse voltage leakage current
@T A=125℃
V
R
=200V
I
F
=100mA
I
F
=200mA
100
1
1.25
5
50
nA
V
pF
ns
m
Forward
NOTES:
voltage
V
F
C
T
t
rr
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Total capacitance
V
R
=0V,f=1MHz
I
F
=I
R
=30mA,I
rr
=0.1XI
R
,
R
L
=100Ω
Reverse recovery time
2012-06
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
