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BAV19WS 参数 Datasheet PDF下载

BAV19WS图片预览
型号: BAV19WS
PDF下载: 下载PDF文件 查看货源
内容描述: SOD- 323塑封装二极管 [SOD-323 Plastic-Encapsulate Diodes]
分类和应用: 二极管光电二极管
文件页数/大小: 3 页 / 404 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
 浏览型号BAV19WS的Datasheet PDF文件第2页浏览型号BAV19WS的Datasheet PDF文件第3页  
SOD-323 Plastic-Encapsulate Diodes
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
PACKAGE
SOD-323
WILLAS
BAV19WS
FM120-M
BAV20WS
THRU
BAV21WS
FM1200-M
Pb Free Product
Features
FAST SWITCHING DIODE
Batch
FEATURES
process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Package outline
SOD-123H
Fast
Low profile surface mounted application in order to
Switching Speed
optimize board space.
Surface Mount Package Ideally Suited for Automatic Insertion
Low power loss, high efficiency.
For
General Purpose Switching Applications
High current capability, low forward voltage drop.
High surge capability.
Pb-Free package is available
Guardring for overvoltage protection.
RoHS product for packing code suffix ”G”
Ultra high-speed switching.
Halogen free product for packing code suffix “H”
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
Moisture Sensitivity Level 1
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
MARKING: BAV19WS:
rated flame retardant
0.024(0.6)
Epoxy : UL94-V0
A8
BAV20WS: T2
Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
0.031(0.8) Typ.
BAV21WS:
terminals, solderable per MIL-STD-750 ,
T3
Terminals :Plated
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Method 2026
Dimensions in inches and (millimeters)
Polarity : Indicated by cathode band
Parameter
Symbol
BAV19WS
BAV20WS
BAV21WS
Unit
Mounting Position : Any
120
200
250
V
V
RM
Non-Repetitive Peak Reverse Voltage
Weight : Approximated 0.011 gram
Mechanical data
Polarity:
Color band denotes cathode end
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
V
RWM
100
150
V
RRM
Ratings at 25℃ ambient temperature unless otherwise specified.
DC Blocking
half wave, 60Hz, resistive of inductive
V
R
Single phase
Voltage
load.
For
Reverse Voltage
V
R(RMS)
 
RMS
capacitive load, derate current by 20%
250
V
71
13
30
21
30
14
40
28
40
106
400
15
200
50
35
2.5
50
0.5
16
60
42
60
1.0
 
30
40
120
141
18
80
56
80
V
10
115
mA
150
100
70
100
105
Forward Continuous Current
Average Rectified
Peak Reverse Voltage
Maximum Recurrent
Output Current
Maximum RMS
Surge
Peak Forward
Voltage
Current @t=1.0ms
Maximum DC Blocking Voltage
 
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
Marking Code
I
FM
I
O
RRM
V
I
FSM
V
RMS
V
DC
I
O
12
20
14
20
mA
120
200
140
200
V
V
Repetitive Peak Forward Current
Power Dissipation
Thermal Resistance Junction to
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Ambient
Maximum Average Forward Rectified Current
@ t=1.0s
A
150
mA
mW
V
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
I
FRM
 
625
250
A
I
FSM
Pd
 
A
R
θJA
R
ΘJA
C
J
T
J
 
 
-55 to +125
500
-55~+150
 
 
℃/W
Storage Temperature
Operating Temperature Range
Storage Temperature Range
T
STG
 
-
65
to +175
-55 to +150
TSTG
Electrical Ratings @Ta=25℃
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
 
 
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
Parameter
Symbol
I
R
V
F
Min
Typ
0.50
Max
0.70
Unit
0.5
10
0.85
Conditions
I
F
=0.1A
I
F
=0.2A
V
R
=100V
0.9
0.92
 
V
@T A=125℃
m
Forward voltage
NOTES:
Reverse current
From Junction to Ambient
BAV19WS
2- Thermal Resistance
BAV20WS
BAV21WS
Capacitance between terminals
Reverse recovery time
V
F1
V
F2
1.0
1.25
0.1
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
V
 
 
I
R
0.1
0.1
μA
V
R
=150V
V
R
=200V
C
T
t
rr
5
50
pF
ns
V
R
=0V,f=1MHz
I
F
=I
R
=30mA
2012-06
Irr=0.1XI
R
,R
L
=100Ω
WILLAS ELECTRONIC CORP
2012-1
WILLAS ELECTRONIC CORP.