SOT-363 Plastic-Encapsulate Diodes
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
SWITCHING DIODE
Features
•
Batch process design, excellent power dissipation offers
FEATURES
reverse leakage current and thermal resistance.
better
•
Low profile surface mounted application in order to
Fast Switching Speed
optimize board space.
Ultra-Small
loss, high efficiency.
•
Low power
Surface Mount Package
•
High current
Purpose Switching Applications
For General
capability, low forward voltage drop.
•
High surge capability.
High Conductance
•
Guardring for overvoltage protection.
Pb-Free package
switching.
•
Ultra high-speed
is available
RoHS product for
planar chip, metal silicon junction.
•
Silicon epitaxial
packing code suffix ”G”
•
Lead-free parts meet
for packing code suffix “H”
Halogen free product
environmental standards of
Moisture Sensitivity Level 1
suffix "G"
•
RoHS product for packing code
MIL-STD-19500 /228
WILLAS
FM120-M
THRU
BAV70DW
FM1200-M
Pb Free Product
PACKAGE
SOT-363
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
6
5
4
0.071(1.8)
0.056(1.4)
MAKING: KJA
Mechanical data
•
Epoxy : UL94-V0 rated flame
Maximum Ratings @Ta=25℃
retardant
•
Case : Molded plastic, SOD-123H
,
Parameter
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
Peak Repetitive Peak Reverse Voltage
•
Polarity : Indicated by cathode band
Working Peak Reverse Voltage
DC Blocking Voltage
•
Mounting Position : Any
Halogen free product for packing code suffix "H"
1
2
3
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Symbol
V
RRM
V
RWM
V
R
I
FM
Limit
Unit
100
Dimensions in inches and (millimeters)
100
V
75
300
150
2
1
200
mA
mA
A
mW
•
Weight : Approximated
Forward Continuous Current
0.011 gram
Ratings at 25℃ ambient temperature unless otherwise
Non-Repetitive Peak Forward Surge Current
specified.
@ t = 1.0µs
I
O
Average Rectified Output
RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM
Current
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
@ t = 1.0s
I
FSM
P
D
Power Dissipation
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
Marking Code
Thermal Resistance Junction to Ambient
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Operating Junction Temperature
V
RRM
V
RMS
V
DC
I
O
12
20
14
20
13
30
21
30
14
40
28
40
15
R
θJA
T
J
35
50
T
STG
50
16
60
42
625
18
150
80
56
10
℃/W
115
100
150
℃
70
120
200
140
200
Volt
105
150
Volt
Maximum DC Blocking Voltage
Storage Temperature
Maximum Average Forward Rectified Current
60
-55~+150
80
1.0
30
100
℃
Volt
Am
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
I
FSM
Max
Unit
V
µA
0.9
0.92
Am
Typical Thermal
Parameter
Resistance (Note 2)
Symbol
R
ΘJA
C
J
T
V
(BR)
J
TSTG
Test
Typical Junction Capacitance (Note 1)
conditions
Min
40
120
℃/W
PF
Reverse breakdown voltage
Operating Temperature Range
Storage Temperature Range
-55 to +125
2.5µA
I
R
=
75
-55 to +150
℃
Reverse voltage leakage current
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
0.025
FM140-MH
SYMBOL
FM120-MH
FM130-MH
V
R
=20V
FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNI
V
F
I
R
V
R
=75V
I
F
=1mA
0.50
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=0, f=1MHz
I
F
=I
R
=10mA,I
rr
=0.1×I
R,
R
L
=100Ω
0.70
-
65
to +175
2.5
715
0.85
℃
Volt
Forward voltage
@T A=125℃
I
R
V
F
0.5
10
NOTES:
855
1000
1250
2
4
mV
mAm
Junction
1 MHZ and applied reverse voltage of 4.0 VDC.
1- Measured at
capacitance
C
j
t
rr
pF
2- Thermal Resistance From Junction to Ambient
Reveres recovery time
ns
2012-06
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.