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BAV70DW 参数 Datasheet PDF下载

BAV70DW图片预览
型号: BAV70DW
PDF下载: 下载PDF文件 查看货源
内容描述: SOT- 363塑封装二极管 [SOT-363 Plastic-Encapsulate Diodes]
分类和应用: 二极管光电二极管
文件页数/大小: 3 页 / 368 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
 浏览型号BAV70DW的Datasheet PDF文件第2页浏览型号BAV70DW的Datasheet PDF文件第3页  
SOT-363 Plastic-Encapsulate Diodes
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
SWITCHING DIODE
Features
Batch process design, excellent power dissipation offers
FEATURES
reverse leakage current and thermal resistance.
better
Low profile surface mounted application in order to
Fast Switching Speed
optimize board space.
Ultra-Small
loss, high efficiency.
Low power
Surface Mount Package
High current
Purpose Switching Applications
For General
capability, low forward voltage drop.
High surge capability.
High Conductance
Guardring for overvoltage protection.
Pb-Free package
switching.
Ultra high-speed
is available
RoHS product for
planar chip, metal silicon junction.
Silicon epitaxial
packing code suffix ”G”
Lead-free parts meet
for packing code suffix “H”
Halogen free product
environmental standards of
Moisture Sensitivity Level 1
suffix "G"
RoHS product for packing code
MIL-STD-19500 /228
WILLAS
FM120-M
THRU
BAV70DW
FM1200-M
Pb Free Product
PACKAGE
SOT-363
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
6
5
4
0.071(1.8)
0.056(1.4)
MAKING: KJA
Mechanical data
Epoxy : UL94-V0 rated flame
Maximum Ratings @Ta=25℃
retardant
Case : Molded plastic, SOD-123H
,
Parameter
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
Peak Repetitive Peak Reverse Voltage
Polarity : Indicated by cathode band
Working Peak Reverse Voltage
DC Blocking Voltage
Mounting Position : Any
Halogen free product for packing code suffix "H"
1
2
3
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Symbol
V
RRM
V
RWM
V
R
I
FM
Limit
Unit
100
Dimensions in inches and (millimeters)
100
V
75
300
150
2
1
200
mA
mA
A
mW
Weight : Approximated
Forward Continuous Current
0.011 gram
Ratings at 25℃ ambient temperature unless otherwise
Non-Repetitive Peak Forward Surge Current
specified.
@ t = 1.0µs
I
O
Average Rectified Output
RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM
Current
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
 
@ t = 1.0s
I
FSM
P
D
Power Dissipation
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
Marking Code
Thermal Resistance Junction to Ambient
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Operating Junction Temperature
V
RRM
V
RMS
V
DC
I
O
12
20
14
20
13
30
21
30
14
40
28
40
15
R
θJA
T
J
35
50
T
STG
50
16
60
42
625
18
150
80
56
10
℃/W
115
100
150
70
120
200
140
200
Volt
105
150
Volt
Maximum DC Blocking Voltage
Storage Temperature
Maximum Average Forward Rectified Current
 
60
-55~+150
80
1.0
 
30
100
Volt
Am
 
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
I
FSM
 
 
Max
Unit
V
µA
0.9
0.92
 
Am
Typical Thermal
Parameter
Resistance (Note 2)
Symbol
R
ΘJA
C
J
T
V
(BR)
J
TSTG
 
Test
Typical Junction Capacitance (Note 1)
 
conditions
Min
40
120
 
℃/W
PF
Reverse breakdown voltage
Operating Temperature Range
Storage Temperature Range
-55 to +125
2.5µA
I
R
=
 
75
-55 to +150
 
Reverse voltage leakage current
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
0.025
FM140-MH
SYMBOL
FM120-MH
FM130-MH
V
R
=20V
FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNI
V
F
I
R
V
R
=75V
I
F
=1mA
0.50
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=0, f=1MHz
I
F
=I
R
=10mA,I
rr
=0.1×I
R,
R
L
=100Ω
0.70
-
65
to +175
2.5
715
0.85
Volt
Forward voltage
@T A=125℃
I
R
V
F
0.5
10
 
NOTES:
855
1000
1250
2
4
mV
mAm
Junction
1 MHZ and applied reverse voltage of 4.0 VDC.
1- Measured at
capacitance
C
j
t
rr
pF
 
 
2- Thermal Resistance From Junction to Ambient
Reveres recovery time
ns
2012-06
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.