SOT-523 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY
•
Batch process design, excellent power dissipation offers
FEATURES
better reverse leakage current and thermal resistance.
Low profile
Speed
Fast
•
Switching
surface mounted application in order to
optimize board space.
For General Purpose Switching Applications
•
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High
•
Conductance
•
High surge capability.
Pb-Free package is available
•
Guardring for overvoltage protection.
RoHS
Ultra high-speed switching.
suffix ”G”
•
product for packing code
Halogen free
epitaxial planar chip, metal silicon junction.
•
Silicon
product for packing code suffix “H”
•
Lead-free parts meet environmental standards of
Moisture Sensitivity Level 1
•
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
WILLAS
BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
BAV70T
FM120-M
BAV99T
THRU
BAW56T
FM1200-M
Pb Free Product
Features
SWITCHING DIODE
Package outline
SOT-523
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals
JD
BAW56T Marking:
:Plated terminals, solderable per MIL-STD-750
BAV70T Marking: JJ
BAV99T
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Marking: JE
Dimensions in inches and (millimeters)
•
Polarity : Indicated by cathode band
Maximum Ratings @Ta=25℃
•
Mounting Position : Any
Parameter
•
Weight : Approximated 0.011 gram
Symbol
Limit
Unit
V
mA
mW
16
60
42
60
1.0
Min
30
40
120
18
80
56
80
10
100
70
100
Reverse voltage
V
R
85
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
I
O
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current
P
D
Forward power dissipation
by 20%
Forward current
75
150
13
30
21
14
40
28
Junction temperature
Marking Code
Maximum RMS Voltage
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
T
j
Maximum Recurrent Peak
Storage temperature
Reverse Voltage
V
RRM
T
stg
V
RMS
I
O
12
20
14
150
-55~+150
35
15
50
℃
℃
115
150
105
150
120
200
140
200
Vo
Vo
Maximum DC Blocking Voltage
20
30
50
V
DC
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise
40
specified)
Maximum Average Forward Rectified Current
Vo
Am
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Parameter
Symbol
I
FSM
Test
I
R
= 1μA
conditions
Max
Unit
V
Am
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Reverse voltage leakage
Storage Temperature Range
Reverse breakdown voltage
V
(BR)
I
R1
I
R2
R
ΘJA
85
Typical Junction Capacitance (Note 1)
current
C
J
V
R
=75V
T
J
TSTG
V
R
=25V
-55 to +125
℃
-
65
to +175
-55 to +150
2
μA
μA
P
℃
0.03
℃
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
715
I
F
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
SYMBOL
=1mA
V
F
V
F
I
F
=10mA
I
R
0.50
0.70
0.5
10
Forward voltage
855
0.85
1000
1250
1.5
4
0.9
@T A=125℃
I
F
=50mA
I
F
=150mA
V
R
=0
f=1MHz
mV
0.92
Vo
mA
Diode
NOTES:
capacitance
C
D
t
rr
pF
ns
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Reverse recovery time
I
F
=I
R
=10mA
I
rr
=0.1×I
R,
R
L
=100Ω
2012-06
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
