WILLAS
Diodes
SOT-323 Plastic-Encapsulate
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
SWITCHING DIODE
Features
FEATURES
process design, excellent power dissipation offers
•
Batch
better reverse leakage current and thermal resistance.
Fast Switching
mounted
•
Low profile surface
Speed
application in order to
optimize board space.
For General Purpose Switching Applications
•
Low power loss, high efficiency.
High Conductance
•
High current capability, low forward voltage drop.
Pb-Free
capability.
•
High surge
package is available
•
Guardring for overvoltage protection.
suffix ”G”
RoHS product for packing code
•
Ultra high-speed switching.
Halogen free
planar chip,
packing code suffix
•
Silicon epitaxial
product for
metal silicon junction.
“H”
Moisture Sensitivity Level 1
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
FM120-M
BAV70W
THRU
FM1200-M
Pb Free Product
Package outline
SOT-323
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
1
3
2
•
ry
0.031(0.8) Typ.
MARKING: KJA
or A4
Mechanical data
Maximum Ratings @Ta=25℃
•
Epoxy : UL94-V0 rated flame retardant
plastic, SOD-123H
•
Case : Molded
Parameter
Symbol
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
RM
V
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Peak Reverse Voltage
Method 2026
0.040(1.0)
0.024(0.6)
Limit
100
0.031(0.8) Typ.
Unit
V
•
Polarity : Indicated by cathode band
Working Peak Reverse Voltage
•
Mounting Position : Any
DC Blocking
:
Voltage
•
Weight Approximated 0.011 gram
RMS Reverse Voltage
Forward Continuous Current
ina
V
RWM
V
R
V
R(RMS)
I
FM
I
O
I
FSM
12
20
14
13
Pd
30
21
V
RRM
Dimensions in inches and (millimeters)
75
V
im
V
RRM
V
RMS
V
DC
I
O
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
53
V
mA
mA
A
Ratings at 25℃ ambient temperature unless otherwise specified.
Average Rectified Output Current
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate
Current @t=1.0μs
Peak Forward Surge
current by 20%
RATINGS
Marking Code
Power Dissipation
Maximum RMS Voltage
SYMBOL
@t =1.0s
300
150
2.0
Pr
el
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
1.0
Maximum Recurrent Peak Reverse Voltage
Thermal Resistance Junction to Ambient
R
θJA
14
40
28
40
15
50
35
50
16
200
60
42
625
18
80
56
80
10
100
70
100
115
mW
℃/W
105
150
120
200
140
200
Volts
Volts
Volts
Junction
Blocking Voltage
Maximum DC
Temperature
Storage Temperature
Maximum Average Forward Rectified Current
superimposed on rated load (JEDEC method)
20
T
j
30
150
60
-55~+150
1.0
30
℃
150
℃
T
STG
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave
Electrical Ratings @Ta=25℃
I
FSM
Conditions
Amps
Typical Thermal Resistance (Note 2)
Parameter
Operating Temperature Range
Storage Temperature Range
Typical Junction Capacitance (Note 1)
R
ΘJA
Symbol
Reverse breakdown voltage
V
(BR)
T
J
C
J
Min
75
Typ
Max
0.715
0.855
Unit
V
-55 to +125
40
120
℃/W
PF
℃
℃
-55 to +150
I
R
=100μA
V
F1
TSTG
V
F2
V
F3
V
F
I
R
0.50
V
-
65
to +175
V
0.70
I
F
=1mA
I
F
=10mA
0.85
Forward voltage
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
1.0
V
I
F
=50mA
0.9
0.92
Volts
V
F4
I
R1
I
R2
T
1.25
2.5
25
2
4
V
μA
nA
pF
ns
0.5
10
I
F
=150mA
V
R
=75V
V
R
=20V
V
R
=0V,f=1MHz
I
F
=I
R
=10mA
Irr=0.1XI
R
,R
L
=100Ω
mAmp
NOTES:
Reverse current
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
C
Capacitance between terminals
2- Thermal Resistance From Junction to Ambient
Reverse
recovery time
t
rr
2012-1
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
