WILLAS
SOT-363 Plastic-Encapsulate Diode
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
•
Batch process
SWITCHING DIODE
design, excellent power dissipation offers
FM120-M
THRU
BAV99DW
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
SOT-363
0.146(3.7)
0.130(3.3)
better reverse leakage current and thermal resistance.
FEATURES
profile surface mounted application in order to
•
Low
optimize board space.
Fast Switching Speed
•
Low power loss, high efficiency.
Ultra-Small Surface Mount Package
drop.
•
High current capability, low forward voltage
•
High surge capability.
For General Purpose Switching Applications
•
Guardring for overvoltage protection.
High Conductance
•
Ultra high-speed switching.
Pb-Free
epitaxial planar chip, metal silicon junction.
•
Silicon
package is available
•
Lead-free parts meet environmental standards
RoHS product for packing code suffix ”G”
of
MIL-STD-19500 /228
Halogen free product for packing
"G"
•
RoHS product for packing code suffix
code suffix “H”
Moisture
free product for
Level 1
code suffix "H"
Halogen
Sensitivity
packing
SOD-123H
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MAKING: KJG
•
Epoxy : UL94-V0 rated flame retardant
Maximum Ratings @T
A
=25℃
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Parameter
Peak Repetitive Peak reverse voltage
•
Peak Reverse Voltage
Working
Polarity : Indicated by cathode band
•
Mounting Position : Any
DC Blocking
Voltage
Method 2026
Mechanical data
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Symbol
V
RRM
V
RWM
V
R
I
FM
Limits
75
Unit
V
Dimensions in inches and (millimeters)
•
Continuous Current
Forward
Weight : Approximated 0.011 gram
Ratings at 25℃
Peak Forward Surge Current
Non-Repetitive
ambient temperature unless otherwise specified.
t = 1.0µs
@
300
150
2
1
200
mA
mA
A
I
O
Average Rectified Output Current
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
@ t = 1.0s
12
20
14
20
13
30
21
30
I
FSM
Power Dissipation
RATINGS
Maximum Recurrent Peak Reverse Voltage
mW
P
D
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
V
RRM
V
RMS
V
DC
I
O
I
FSM
14
R
θJA
15
40
50
28
16
625
18
60
80
10
℃/W
100
70
℃
100
℃
115
150
105
150
120
200
140
200
Marking Code
Thermal Resistance Junction to Ambient Air
Operating Junction Temperature
Maximum RMS Voltage
Maximum
temperature
Storage
DC Blocking Voltage
T
J
35
150
56
42
1.0
30
Vo
Vo
40
T
STG
50
60
-55-150
80
Vo
Maximum Average Forward Rectified Current
Am
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
MAX
UNIT
V
Am
Parameter
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Symbol
R
ΘJA
C
J
Test
conditions
MIN
40
120
℃/
P
Reverse breakdown voltage
Operating Temperature Range
Storage Temperature Range
V
T
J
(BR) R
TSTG
-55 to +125
2.5µA
I
R
=
75
-55 to +150
℃
Reverse voltage leakage current
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
0.025
V
R
=20V
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
V
F
I
R
0.50
I =1mA
F
I
R
V
R
=75V
0.70
-
65
to +175
2.5
0.85
715
℃
µA
0.9
0.92
Vo
Forward voltage
Rated DC Blocking Voltage
V
F
NOTES:
1-
Junction capacitance
Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=0, f=1MHz
I
F
=I
R
=10mA,I
rr
=0.1×I
R,
R
L
=100Ω
0.5
10
855
1000
1250
2
4
mV
mA
C
T
t
rr
pF
nS
Reveres recovery time
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
