WILLAS
Dual Series Switching Diode
•
RoHS product for packing code suffix "G",
•
Weight: 0.008g
Device
BAV99
.
Halogen free product for packing code suffix "H"
DEVICE MARKING ORDERING INFORMATION
Marking
Shipping
.
BAV99
A7
3000 Tape & Reel
1
ANODE
3
CAHODE/ANODE
2
CATHODE
SOT–23
Value
70
215
500
70
715
450
2.0
1.0
0.5
Unit
Vdc
mAdc
mAdc
V
mA
mA
A
MAXIMUM RATINGS
(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Repetitive Peak Reverse Voltage
Average Rectified Forward Current (1)
(averaged over any 20 ms period)
Repetitive Peak Forward Current
Non–Repetitive Peak Forward Current
t = 1.0
µ
s
t = 1.0 ms
t = 1.0 S
I
Symbol
V
R
I
F
FM(surge)
V
RRM
I
F(AV)
I
FRM
I
FSM
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
FR–5 Board, (1) T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
θJA
P
D
556
300
2.4
R
θJA
T
J
, T
stg
417
–65 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
V
(BR)
I
R
Min
70
—
––
––
—
––
—
––
––
t
rr
V
FR
—
—
Max
—
2.5
30
50
1.5
715
855
1000
1250
6.0
1.75
ns
V
Unit
Vdc
µAdc
OFF CHARACTERISTICS
Reverse Breakdown Voltage(I
(BR)
= 100
µA)
Reverse Voltage Leakage Current (V
R
= 70 Vdc)
(V
R
= 25 Vdc, T
J
= 150°C)
(V
R
= 70 Vdc, T
J
= 150°C)
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
Forward Voltage (I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, i
R(REC)
= 1.0 mAdc, R
L
= 100Ω ) (Figure 1)
Forward Recovery Voltage
(I
F
= 10 mA, t
r
= 20 ns)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
C
D
V
F
pF
mVdc
WILLAS [ WILLAS ELECTRONIC CORP ]
