WILLAS
SOT-363 Plastic-Encapsulate Diode
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
PACKAGE
FM120-M
THRU
BAW56DW
FM1200-M
Pb Free Product
Features
SWITCHING DIODE
Package outline
SOT-363
SOD-123H
•
Batch process design, excellent power dissipation offers
better
FEATURES
reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
Fast Switching Speed
optimize board space.
Low power loss, high efficiency.
•
Ultra-Small Surface Mount Package
•
High current capability, low forward voltage drop.
High surge capability.
•
For General Purpose Switching Applications
Guardring for overvoltage protection.
•
High Conductance
•
Ultra high-speed switching.
Pb-Free package is available
•
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts
for packing code
standards
•
RoHS product
meet environmental
suffix ”G”
of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
•
RoHS product for packing code suffix "G"
Moisture Sensitivity Level 1
MIL-STD-19500 /228
Halogen free product for packing code suffix “H”
Halogen free product for packing code suffix "H"
0.040(1.0)
0.024(0.6)
MAKING: KJC
•
Epoxy : UL94-V0 rated flame
Maximum Ratings @T
A
=25℃
retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Parameter
Method 2026
Peak Repetitive Peak reverse voltage
•
Polarity : Indicated by cathode band
Working Peak Reverse Voltage
DC Blocking
Voltage
•
Mounting Position : Any
Mechanical data
0.031(0.8) Typ.
0.031(0.8) Typ.
Symbol
V
RRM
V
RWM
V
R
I
FM
Limits
Unit
Dimensions in
75
inches and (millimeters)
V
•
Weight : Approximated
Forward Continuous Current
0.011 gram
Ratings at 25℃ ambient temperature unless otherwise
Non-Repetitive Peak Forward Surge Current
specified.
@ t = 1.0µs
300
150
2
1
200
mA
mA
A
mW
I
O
Average Rectified Output
RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM
Current
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
@ t = 1.0s
I
FSM
P
Power Dissipation
RATINGS
Marking Code
Thermal Resistance
D
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
Operating Junction Temperature
Maximum RMS Voltage
Maximum DC Blocking Voltage
Storage temperature
Maximum Recurrent Peak Reverse Voltage
Junction to Ambient Air
V
RRM
V
RMS
V
DC
I
O
I
FSM
12
20
14
20
13
30
21
30
14
40
28
40
R
θJA
15
50
16
625
18
60
80
42
T
J
35
50
T
STG
150
10
℃/W
100
70
℃
100
℃
115
150
105
150
120
200
140
200
Vol
56
Vol
60
-55-150
80
1.0
30
Vol
Maximum Average Forward Rectified Current
Am
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
MAX
UNIT
V
Am
Parameter
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Symbol
R
ΘJA
C
J
Test
conditions
MIN
40
120
℃/W
PF
Reverse breakdown voltage
Operating Temperature Range
Storage Temperature Range
V
T
J
(BR) R
TSTG
-55 to +125
I
R
= 2.5µA
75
-55 to +150
℃
Reverse voltage leakage current
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
0.025
V
R
=20V
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
V
F
I
R
V
I
R
V
R
=75V
I
F
=1mA
0.50
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=0, f=1MHz
I
F
=I
R
=10mA,I
rr
=0.1×I
R,
R
L
=100Ω
0.70
-
65
to +175
2.5
0.85
715
℃
µA
0.9
0.92
Vol
Forward voltage
0.5
10
@T A=125℃
F
NOTES:
855
1000
1250
2
4
mV
mAm
1-
Junction capacitance
Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
C
T
t
rr
pF
nS
2- Thermal Resistance From Junction to Ambient
Reveres recovery time
2012-06
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
