FM120-M
BC807-40WT1
THRU
FM1200-M
General Purpose Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
WILLAS
PACKAGE
Pb Free Produc
Features
Package outline
SOD-123H
PNP Silicon
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
RoHS product for packing code suffix "G"
•
High surge capability.
Halogen free product for
protection.
code suffix "H"
•
Guardring for overvoltage
packing
•
Ultra high-speed switching.
DEVICE MARKING AND ORDERING INFORMATION
•
Silicon epitaxial planar chip, metal silicon junction.
Marking
Package
Shipping
Lead-free parts meet environmental standards of
•
Device
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
BC807-40WT1
SOT-323
3000/Tape&Reel
YL
Halogen free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
SOT–323
MAXIMUM RATINGS
Mechanical data
ry
0.031(0.8) Typ.
•
Epoxy : UL94-V0 rated flame retardant
Rating
Symbol
Value
Unit
•
Case : Molded plastic, SOD-123H
Collector–Emitter Voltage
V
CEO
–45
V
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Collector–Base
Method 2026
Voltage
V
CBO
–50
–5.0
V
Emitter–Base
Indicated by cathode
EBO
V
band
•
Polarity :
Voltage
V
3
COLLECTOR
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
1
BASE
ina
–500
mAdc
Max
225
1.8
Unit
mW
mW/°C
R
θJA
P
D
12
20
14
Dimensions in inches and (millimeters)
2
EMITTER
•
Mounting Position : Any
Collector Current — Continuous
THERMAL CHARACTERISTICS
I
C
•
Weight : Approximated 0.011 gram
Marking Code
Pr
el
RATINGS
Thermal Resistance, Junction to Ambient
im
Characteristic
Symbol
Ratings at 25℃ ambient temperature unless otherwise specified.
Total Device Dissipation FR– 5 Board, (1)
P
D
Single phase half wave, 60Hz, resistive of inductive load.
T
A
= 25°C
For capacitive load, derate current by 20%
Derate above 25°C
Total Device Dissipation
Maximum Recurrent Peak Reverse Voltage
Alumina Substrate, (2) T
A
= 25°C
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
V
RRM
V
RMS
Maximum RMS
above 25°C
Derate
Voltage
V
DC
R
θJA
20
Junction and Storage Temperature
Maximum Average Forward Rectified Current
I
O
T
J
, T
stg
–55 to +150
ELECTRICAL CHARACTERISTICS
(T
A
=
Peak Forward Surge Current 8.3 ms single half sine-wave
25°C unless otherwise noted.)
I
FSM
Maximum DC Blocking Voltage
Thermal Resistance, Junction to Ambient
superimposed on rated load (JEDEC method)
556
13
30
300
21
2.4
30
417
14
40
°C/W
15
50
mW
28
mW/°C
35
40
°C/W
50
°C
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Unit
Typical Thermal Resistance (Note 2)
Characteristic
Symbol
R
ΘJA
C
J
T
J
Min
Typ
OFF CHARACTERISTICS
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Collector–Emitter Breakdown Voltage
Storage Temperature Range
-55 to +125
Max
40
120
-55 to +150
—
—
-
—
to +175
65
V
(I
C
= –10 mA)
V
TSTG
(BR)CEO
V
(BR)CES
–45
–50
0.50
Collector–Emitter Breakdown Voltage
CHARACTERISTICS
Maximum
EB
= 0, I C = –10µA)
1.0A DC
(V
Forward Voltage at
Rated DC Blocking Voltage
Maximum Average Reverse Current at @T A=25℃
Emitter–Base Breakdown Voltage
@T A=125℃
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
I
R
0.70
—
V
0.85
0.9
0.92
0.5
(I
E
= –1.0
µA)
V
(BR)EBO
I
CBO
–5.0
—
—
10
V
NOTES:
Collector Cutoff Current
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
(V
CB
= –20 V)
—
—
—
—
–100
–5.0
nA
µA
(V
CB
= –20 V, T
J
= 150°C)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2012-06
WILLAS ELECTRONIC CORP
2012-
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
