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BC807-XXLT1 参数 Datasheet PDF下载

BC807-XXLT1图片预览
型号: BC807-XXLT1
PDF下载: 下载PDF文件 查看货源
内容描述: 通用晶体管 [General Purpose Transistors]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 166 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
 浏览型号BC807-XXLT1的Datasheet PDF文件第2页浏览型号BC807-XXLT1的Datasheet PDF文件第3页  
WILLAS
General Purpose Transistors
PNP Silicon
FEATURE
Collector current capability I
C
= -500 mA.
Collector-emitter voltage V
CEO
(max) = -45 V.
General purpose switching and amplification.
PNP complement: BC807 Series.
We declare that the material of product compliance with RoHS requirements.
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
BC807-xxLT1
SOT–23
DEVICE MARKING AND ORDERING INFORMATION
Device
BC807-16LT1
Marking
5A1
Shipping
3000/Tape&Reel
ina
3000/Tape&Reel
3000/Tape&Reel
ry
3
COLLECTOR
1
BASE
2
EMITTER
BC807-25LT1
5B1
BC807-40LT1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Pr
el
Symbol
V
CEO
Value
–45
–50
V
CBO
V
EBO
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
R
θJA
T
J
, T
stg
Symbol
P
D
225
1.8
R
θJA
P
D
300
2.4
417
–55 to +150
mW
mW/°C
°C/W
°C
556
mW
mW/°C
°C/W
Max
Unit
2012-
im
5C1
Unit
V
V
V
–5.0
I
C
–500
mAdc
WILLAS ELECTRONIC CORP.